S-8352C32UA-K6RT2G Seiko Instruments, S-8352C32UA-K6RT2G Datasheet - Page 22

IC REG SW 100KHZ 3.2V SOT89-3

S-8352C32UA-K6RT2G

Manufacturer Part Number
S-8352C32UA-K6RT2G
Description
IC REG SW 100KHZ 3.2V SOT89-3
Manufacturer
Seiko Instruments
Type
Step-Up (Boost)r
Datasheet

Specifications of S-8352C32UA-K6RT2G

Internal Switch(s)
No
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
3.2V
Frequency - Switching
100kHz
Voltage - Input
0.9 ~ 10 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Power - Output
500mW
Output Voltage
3.2 V
Input Voltage
10 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
22
STEP-UP, BUILT-IN / EXTERNAL FET PFM CONTROL SWITCHING REGULATOR / SWITCHING REGULATOR CONTROLLER
S-8351/8352 Series
4. 2 Bipolar (NPN) Type
A circuit example using the CPH3210 (h
(NPN) is shown in Figure 24 to 26 in the “
transistor determine the driving capacity to increase the output current using a bipolar transistor. A peripheral
circuit example of the transistor is shown in Figure 20.
*1. V
The recommended R
transistor (h
A small R
pulse and the voltage may drop due to wiring resistance or other factors in the actual circuit, therefore the
optimum R
Connecting the speed-up capacitor (C
switching loss and improves the efficiency.
The C
Select a C
characteristics of the bipolar transistor.
*1. For D type,
DD
b
for D type.
value is calculated according to
b
b
b
value can increase the output current, but the efficiency decreases. Since a current may flow on the
FE
value should be determined by experiment.
value after performing sufficient evaluation since the optimum C
) using
R
b
=
b
V
I =
b
DD
value is around 1 kΩ. Actually, calculate the necessary base current (I
I
b
h
I
PK
0
FE
7 .
, and select the smaller R
Figure 20 External Transistor Peripheral Circuit
I
0
EXTH
4 .
Pch
Nch
Seiko Instruments Inc.
b
.
) in parallel with the R
C
FE
b
VOUT
= 200 to 560) from Sanyo Electric Co., Ltd. as a bipolar transistor
2
π
Standard Circuits”. The h
*1
EXT
R
b
1
f
osc
b
value than
2200 pF
0
1 kΩ
7 .
C
R
b
b
.
b
resistance as shown in Figure 20 , decreases
R
b
=
I
V
PK
OUT
FE
b
I
b
value and R
value differs depending upon the
0
7 .
I
0
EXTH
4 .
b
value of the bipolar
*1
b
) from the bipolar
.
Rev.3.0
_00

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