LM78S40CN/NOPB National Semiconductor, LM78S40CN/NOPB Datasheet - Page 3

• Manufacturer Part Number: LM78S40CN/NOPB
• Description: IC MULTI CONFIG ADJ 1.5A 16DIP
• Manufacturer: National Semiconductor
• Type: Step-Down (Buck), Step-Up (Boost), Invertingr

Specifications of LM78S40CN/NOPB

• Internal Switch(s): Yes
• Synchronous Rectifier: No
• Number Of Outputs: 1
• Voltage - Output: 1.25 ~ 40 V
• Current - Output: 1.5A
• Frequency - Switching: 100kHz
• Voltage - Input: 2.5 ~ 40 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 16-DIP (0.300", 7.62mm)
• Power - Output: 1.04W
• Common Mode Rejection Ratio: 76
• Current, Input Bias: 35 nA (Comparator), 30 nA (Operational Amplifier)
• Current, Input Offset: 5 nA
• Current, Output: 1.5 A
• Current, Supply: 2.3 mA
• Package Type: DIP-16
• Power Dissipation: 1.04 W
• Regulation, Line: 0.04 mV/V
• Regulation, Load: 0.2 mV/mA
• Regulator Type: Switching, Step-Up, Step-Down
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Input: 2.5 to 40 V
• Voltage, Offset: 1.5 mV (Comparator), 4 mV (Operational Amplifier)
• Voltage, Output: 1.25 to 40 V
• Voltage, Supply, Rejection Ratio: 76 dB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LM78S40CN; *LM78S40CN/NOPB; 78S40; LM78S40CN

4
OUTPUT SWITCH SECTION
h
I
POWER DIODE
V
I
COMPARATOR
V
I
I
V
PSRR
OPERATIONAL AMPLIFIER
V
I
I
A
A
V
CMR
PSRR
I
I
SR
V
V
Symbol
L
DR
IB
IO
IB
IO
O
O
FE
T
FD
IO
CM
IO
VS
VS
CM
OL
OH
LM78S40
Electrical Characteristics
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when ordering the device
beyond its rated operating conditions.
Note 2: T
Note 3: Ratings apply to ambient temperature at 25˚C. Above this temperature, derate the 16L-Ceramic DIP at 10 mW/˚C, and the 16L-Molded DIP at 8.3 mW/˚C.
Note 4: For supply voltages less than 30V, the absolute maximum voltage is equal to the supply voltage.
Note 5: A military RETS specification is available on request. At the time of printing, the LM78S40 RETS specification complied with the Min and Max limits in this
table. The LM78S40J may also be procured as a Standard Military Drawing.
+
−
A
+
−
= Operating temperature range, V
J Max
Output Transistor Current
Gain
Output Leakage Current
Forward Voltage Drop
Diode Leakage Current
Input Offset Voltage
Input Bias Current
Input Offset Current
Common Mode Voltage
Range
Power Supply Rejection
Ratio
Input Offset Voltage
Input Bias Current
Input Offset Current
Voltage Gain
Voltage Gain
Common Mode Voltage
Range
Common Mode Rejection
Power Supply Rejection
Ratio
Output Source Current
Output Sink Current
Slew Rate
Output Voltage LOW
Output Voltage High
= 150˚C for the Molded DIP, and 175˚C for the Ceramic DIP.
Parameter
+
−
IN
= 5.0V, V
V
R
R
V
V
V
I
V
I
V
V
V
V
T
V
V
V
V
T
T
T
T
I
I
C
D
L
L
A
A
A
A
A
O
D
CM
CM
CM
IN
CM
CM
CM
O
O
CM
+
L
L
(Note 5) (Continued)
= −5.0 mA, T
= 50 mA, T
= 1.0A, V
= 1.0A
(Op Amp) = 3.0V to 40V, T
= 25˚C
= 2.0 k
= 2.0 k
= 25˚C
= 25˚C
= 25˚C
= 25˚C
= 40V, T
= 40V, T
= 1.0V to 2.5V, T
= 1.0V to 2.5V, T
= 3.0V to 40V, T
= V
= V
= V
= 2.5V
= 2.5V
= 2.5V
= 0V to 3.0V, T
+
REF
REF
REF
(Op Amp) = 5.0V, unless otherwise specified.
CE
A
A
to GND;
to V
A
= 25˚C
= 25˚C
= 5.0V, T
A
= 25˚C
+
Conditions
= 25˚C
(Op Amp)
A
A
A
A
= 25˚C
= 25˚C
= 25˚C
= 25˚C
A
= 25˚C
A
= 25˚C
V + (Op
Amp) −
Min
70
25
76
76
75
10
3V
25
0
0
1.25
Typ
250
250
100
100
150
1.5
5.0
4.0
5.0
0.6
70
10
10
35
96
30
35
V
V
CC
Max
200
200
1.5
IN
1.0
15
75
15
75
–2
− 2
Units
V/mV
V/mV
V/µs
mV
mV
mA
mA
nA
nA
nA
nA
dB
nA
dB
dB
nA
V
V
V
V
V