LM5025AMTC/NOPB National Semiconductor, LM5025AMTC/NOPB Datasheet - Page 6

• Manufacturer Part Number: LM5025AMTC/NOPB
• Description: IC CTRLR PWM CLAMP VOLT 16TSSOP
• Manufacturer: National Semiconductor
• Series: PowerWise®r

Specifications of LM5025AMTC/NOPB

• Pwm Type: Voltage Mode
• Number Of Outputs: 2
• Frequency - Max: 1MHz
• Duty Cycle: 92.5%
• Voltage - Supply: 13 V ~ 90 V
• Buck: Yes
• Boost: Yes
• Flyback: Yes
• Inverting: Yes
• Doubler: No
• Divider: No
• Cuk: No
• Isolated: Yes
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-TSSOP
• Frequency-max: 1MHz
• Number Of Pwm Outputs: 2
• On/off Pin: No
• Adjustable Output: No
• Topology: Forward
• Switching Freq: 220KHz
• Output Current: 3000/1000A
• Synchronous Pin: Yes
• Rise Time: 20ns
• Fall Time: 15ns
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 16
• Package Type: TSSOP
• For Use With: LM5025AEVAL - BOARD EVALUATION LM5025ALM5025EVAL - EVALUATION BOARD FOR LM5025
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *LM5025AMTC; *LM5025AMTC/NOPB; LM5025AMTC

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Soft-Start
Oscillator
PWM Comparator
Volt x Second Clamp
UVLO Shutdown
Output Section
Electrical Characteristics
Symbol
Specifications with standard typeface are for T
Temperature range. V
Soft-start Current
Source Normal
Soft-start Current
Source following a
CS2 event
Frequency1
Frequency2
Sync threshold
Min Sync Pulse Width
Sync Frequency
Range
Delay to Output
Duty Cycle Range
COMP to PWM Offset
COMP Open Circuit
Voltage
COMP Short Circuit
Current
Ramp Clamp Level
Undervoltage
Shutdown Threshold
Undervoltage
Shutdown Hysteresis
OUT_A High
Saturation
OUTPUT_A Peak
Current Sink
OUT_A Low
Saturation
OUTPUT_A Rise Time
OUTPUT_A Fall Time
OUT_B High
Saturation
OUTPUT_B Peak
Current Sink
OUT_B Low
Saturation
OUTPUT_B Rise Time
Parameter
IN
= 48V, V
CC
T
T
RT = 10.4KΩ
COMP step 5V to 0V
Time to onset of OUT_A
transition low
COMP = 0V
Delta RAMP measured
from onset of OUT_A to
Ramp peak.
COMP = 5V
MOS Device
-10mA,
Bipolar Device
MOS Device
10mA,
C
C
MOS Device
-10mA,
Bipolar Device
MOS Device
10mA,
C
= 10V, RT = 31.3kΩ, R
A
J
gate
gate
gate
= T
= 25˚C
= 2.2nF
= 2.2nF
= 1nF
(Continued)
low
Conditions
J
to T
= 25˚C, and those with boldface type apply over full Operating Junction
@
@
@
@
high
@
@
Iout =
Iout =
Iout =
Iout =
Vcc/2
Vcc/2
SET
6
= 27.4kΩ) unless otherwise stated (Note 3)
2.44
Min
180
175
500
160
0.5
0.7
4.3
0.6
2.4
17
16
0
Typ
200
580
2.5
2.5
22
40
20
20
15
10
12
20
1
2
1
1
5
3
6
1
Max
2.56
220
225
660
100
1.5
1.3
5.9
1.4
2.6
27
80
24
10
20
18
9
Units
kHz
kHz
kHz
mA
µA
µA
µA
ns
ns
ns
ns
ns
%
Ω
Ω
Ω
Ω
V
V
V
V
V
A
A