TLE6280GP Infineon Technologies, TLE6280GP Datasheet - Page 9

• Manufacturer Part Number: TLE6280GP
• Description: IC BRIDGE DRIVER 3PHASE PDSO-36
• Manufacturer: Infineon Technologies
• Type: 3 Phase Bridge Driverr

Specifications of TLE6280GP

• Applications: DC Motor Driver, 3 Phase
• Number Of Outputs: 1
• Voltage - Supply: 8 V ~ 20 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DSO-36
• Supply Current: 28 mA
• Mounting Style: SMD/SMT
• Packages: PG-DSO-36
• Operating Range: 8.0 - 36.0 V
• Iq: 12 mA
• Turn On/off Current: 0.9/ 0.85 A
• D.c.-range @ 20khz: 0...95%
• Numbers Of Integrated Opamps For Load Current Measurement: 0.0
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Voltage - Load: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SP000012557; SP000362092; TLE6280GP; TLE6280GPT; TLE6280GPTR

The power dissipation within the driver IC is strongly dependent upon the use of the driver
and the external components. Nevertheless, a rough estimation of the worst case power dis-
sipation is possible.
Worst case calculation is:
P
With:
P
f
Q
n
const
I
V
P
This value can be reduced dramatically by the use of external gate resistors.
Recommended start up procedure
To assure the driver to be active and functional, a special initialization procedure is required
whenever the gate drive is enabled (V
enabled, after 10 s or later, positive-going transition signals at all ILx pins are required in or-
der to ensure proper start-up of the output driver. This procedure assures a proper wake up
the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors
might lead to low Gate-Source voltages mainly in highside and can cause a short circuit de-
tection when the highside switches are activated. Not changing the ILx input signal after
enabling the device may cause the lowside outputs to stay in off conditions.
VS(open)
PWM
D
D
VS
RGate
gate
= (Q
gate
= Power dissipation in the driver IC
= Switching frequency
= Total gate charge of used MOSFET at 10V V
= number of switched Mosfets
= constant considering some leakage current in the driver and the power dissipa-
tion caused by the charge pump (nominally = 2)
= Current consumption of driver without connected Mosfets during switching
= Voltage at Vs
= Power dissipation in the external gate resistors
*n*const* f
PWM
+ I
VS(open)
) * V
MFP
Vs
9
- P
is changed from LO to HI). Every time the driver is
RGate
GS
Datasheet TLE6280GP
2004-03-31