BTN7971B Infineon Technologies, BTN7971B Datasheet
BTN7971B
Specifications of BTN7971B
BTN7971BTR
SP000379686
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BTN7971B Summary of contents
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... Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 6.3 Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet High Current PN Half Bridge 2 BTN7971B Rev. 2.0, 2008-06-27 ...
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... AEC Qualified Description The BTN7971B is a integrated high current half bridge for motor drive applications part of the NovalithIC™ family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI ...
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... Block Diagram The BTN7971B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology ...
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... Pin Configuration 3.1 Pin Assignment Figure 3 Pin Assignment BTN7971B (top view) 3.2 Pin Definitions and Functions Pin Symbol 1 GND INH 4,8 OUT Bold type: pin needs power wiring Data Sheet I/O Function - Ground I Input Defines whether high- or lowside switch is activated I Inhibit ...
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... -44 D(HS) I D(LS) - -90 D(HS) I D(LS) -85 I -55 D(HS) I D(LS) -50 -60 - -55 stg V ESD - High Current PN Half Bridge BTN7971B General Product Characteristics Unit Conditions Max – 5.3 V – 1.0 V – – – < 85°C C switch active < 125°C C switch active < 85° 10ms ...
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... Figure 4 BTN7971B Maximum Single Pulse Current ( This diagram shows the maximum single pulse current that can be driven for a given pulse time maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. ...
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... Min. Typ. R – 1.3 thJC(LS – 0.6 thJC(HS – 0.7 thJC – 20 thJA 8 High Current PN Half Bridge BTN7971B General Product Characteristics Unit Conditions Max – Parameter Deviations possible °C 150 – Unit Conditions Max. 1.8 K/W – 0.9 K/W – 1.0 K/W – ...
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... A, all voltages with respect to ground, positive current flowing into pin L Symbol Limit Values Min. Typ. I – 2 VS(on) I – 7 VS(off) – – - 120 T [°C] 9 High Current PN Half Bridge BTN7971B Block Description and Characteristics Unit Conditions Max INH Ω SR DC-mode normal operation (no fault condition µ INH < 85 °C j ...
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... Power Stages The power stages of the BTN7971B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes ...
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... R ON(LS) – 9 – – 14 17.7 I – – 1 L(LKLS) – – SD(LS) – 0.9 1.5 – 0.8 1.1 – 0.7 0.9 11 High Current PN Half Bridge BTN7971B Unit Conditions I V mΩ 13.5 V OUT ° 150 ° µ INH OUT T < 85 ° µ ...
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... LS df(LS) f(LS) dr(LS) Data Sheet ΔV OUT to GND) load ΔV OUT to VS) load t + 0.5 ) f(HS 0.5 ). r(LS) 12 High Current PN Half Bridge BTN7971B Block Description and Characteristics ( (HS ) 90% ΔV OUT 10 r(LS ) dr(LS ) 90% ΔV OUT 10% Rev. 2.0, 2008-06- ...
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... V / OUT t 9.8 16.6 f(HS) – 10.8 1 df(HS) 1 1.6 – 2 Δ Δ OUT r(HS) OUT 13 High Current PN Half Bridge BTN7971B Block Description and Characteristics Unit Conditions Max. µ Ω – = 5.1 kΩ kΩ SR V/µ Ω – = 5.1 kΩ 13 kΩ SR µ Ω ...
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... – = 5.1 kΩ 13 kΩ SR µ Ω – = 5.1 kΩ kΩ SR µ Ω 0. – = 5.1 kΩ kΩ SR V/µ Ω – = 5.1 kΩ 13 kΩ SR µ Ω – = 5.1 kΩ kΩ OUT f(LS) Rev. 2.0, 2008-06-27 BTN7971B ...
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... Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 5.3.4 fault condition the BTN7971B will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current I ...
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... Typical Current Limitation Level vs. Current Slew Rate dI/dt Data Sheet t CLS Low Side Switch 90 = -40° 25° 150° 1500 2000 dI /dt [A/ms High Current PN Half Bridge Block Description and Characteristics I CLL0 T = -40° 25° 150° 500 1000 1500 dI /dt [A/ms] L Rev. 2.0, 2008-06-27 BTN7971B t 2000 ...
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... In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7971B compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e ...
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... T 150 – jSO Δ T – – reset , activation of the Current Limitation mode may occur before Undervoltage Shut Down . 18 High Current PN Half Bridge BTN7971B Block Description and Characteristics Unit Conditions Max. V 5.5 V increasing S V 4.5 V decreasing INH = 1 V 5.5 V ...
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... MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTN7971B can be interfaced directly to a microcontroller, as long as the maximum ratings in 5 ...
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... ON OFF Error signal is reset after 2* CLS CLS Switches OFF = switched off ON = switched on 20 High Current PN Half Bridge BTN7971B Block Description and Characteristics Error Flag Mode I I [A] CLx L Mode Stand-by mode LSS active HSS active Shut-down of LSS, HSS activated, error detected ...
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... INHY I – 30 150 INH(H) I IN(H) I – 25 125 INH(L) I IN(L) k ILIS 6.5 IS(lim) I – – 1 ISL I – 1 100 ISH 21 High Current PN Half Bridge BTN7971B Unit Conditions V – V – mV – µ 5 INH V V µ 0 INH kΩ 13 1kΩ µA ...
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... If the BTN7971B is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. ...
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... Half-bridge Configuration Considerations Please note that, if the BTN7971B is used in a half-bridge configuration with the load connected between OUT and GND and the supply voltage is exceeding the Overvoltage Switch-OFF level “Overvoltage Lock Out” feature leads to automatically turning on the high side switch, while turning off the low ...
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... For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 10 ±0 8.5 0...0.15 ±0 1.27 0. High Current PN Half Bridge Package Outlines 4.4 1.27 ±0.1 B 0.05 2.4 0.1 0.1 B GPT09114 10.8 0.47 0.8 8.42 ) Dimensions in mm Rev. 2.0, 2008-06-27 BTN7971B ...
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... Revision History Revision Date Changes 2.0 2008-06-27 Initial Data Sheet Data Sheet High Current PN Half Bridge 25 BTN7971B Revision History Rev. 2.0, 2008-06-27 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...