VB027(6) STMicroelectronics, VB027(6) Datasheet - Page 7

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VB027(6)

Manufacturer Part Number
VB027(6)
Description
IC DVR PWR COIL 300V PENTAWATTHV
Manufacturer
STMicroelectronics
Series
VIPower™r
Datasheet

Specifications of VB027(6)

Current - Output
9A
Voltage - Supply
4.5 V ~ 5.5 V
Mounting Type
Through Hole
Package / Case
Pentawatt-5 HV (Bent and Staggered Leads)
Product
Electronic Ignition Drivers
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Applications
-
Number Of Outputs
-
Voltage - Load
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VB027(6)-11
Quantity:
1 600
Company:
Part Number:
VB027(6)-11
Quantity:
1 600
Figure 10. VIPower M1 technology overview - power cross section
CONCLUSION
The VB027 is the latest and the most representative
element of a new family of automotive devices
developed in VIPower
characteristics of the device can be summarized as
follows: the coil current is internally limited, built-in
collector-emitter voltage clamping is present, the
input is TTL/CMOS compatible, and a diagnostic
output to the micro-processor for the dwell angle
control and overtemperature protection is available.
Moreover the die-size is compatible with the TO-220
package. These features, which are unique in a
single device, make the VB027 one of the most
aggressive competitors in microprocessor based
EMS.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
TM
International Symposium on Power Semiconductor Devices
M1 technology. The main
BASE
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
p+
1999 STMicroelectronics - Printed in Italy - All Rights Reserved
n- type epilayer
The ST logo is a trademark of STMicroelectronics
STMicroelectronics GROUP OF COMPANIES
Monterrey, CA., USA May 1993
n+ type buried layer
p- type buried layer
http://www.st.com
Presented at
COLLECTOR
n- type epilayer
n+ substrate
EMITTER
n+
BASE
p+
APPLICATION NOTE
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