BTS133 Infineon Technologies, BTS133 Datasheet - Page 2

• Manufacturer Part Number: BTS133
• Description: MOSFET N-CH 60V 7A TO-220
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS133

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 40 mOhm
• Current - Output / Channel: 7A
• Current - Peak Output: 65A
• Voltage - Supply: 2.2 V ~ 10 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS133IN; BTS133NK; SP000011211

Datasheet
1 In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2 V
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB:
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current
-0.2V ≤ V
V
Operating temperature
Storage temperature
Power dissipation
T
Unclamped single pulse inductive energy
I
Electrostatic discharge voltage
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection V
V
t
t
D(ISO)
d
d
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
C
IN
IN
= 400 ms, R
= 400 ms, R
= 25 °C
=low or high; V
< -0.2V or V
= 7 A
IN
≤ 10V
I
I
= 2 Ω, I
= 2 Ω, I
IN
A
> 10V
=13.5 V
D
D
LoadDump
=0,5*7A
= 7A
1)
3)
(Human Body Model)
2)
= V
A
+ V
S
2
R
R
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
DS(SC)
tot
AS
ESD
LD
thJC
thJA
thJA
Smart Low Side Power Switch
- 40 ... +150
- 55 ... +150
| I
no limit
Value
2000
3000
IN
1.4
75
45
60
32
90
90
74
| ≤ 2
Rev. 1.3, 2008-12-10
HITFET BTS 133
K/W
Unit
V
mA
°C
W
mJ
V