VNP5N07FI STMicroelectronics, VNP5N07FI Datasheet - Page 8

MOSFET N-CH 70V 5A ISOWATT-220

VNP5N07FI

Manufacturer Part Number
VNP5N07FI
Description
MOSFET N-CH 70V 5A ISOWATT-220
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VNP5N07FI

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
200 mOhm
Current - Peak Output
5A
Mounting Type
Through Hole
Package / Case
ISOWATT-220-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Other names
497-3313-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP5N07FI
Manufacturer:
ST
Quantity:
12 500
Part Number:
VNP5N07FI-E
Manufacturer:
CREE
Quantity:
10 000
Electrical specifications
8/24
Table 7.
1. Parameters guaranteed by design / characterization.
Table 8.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
2. Parameters guaranteed by design / characterization.
Table 9.
1. Parameters guaranteed by design / characterization.
Symbol
Symbol
Symbol
(dI/dt)
I
t
T
V
E
Q
RRM
dlim
T
t
t
t
t
I
t
jsh
d(on)
d(off)
d(on)
d(off)
SD
as
I
gf
rr
jrs
Q
rr
lim
t
t
t
t
(2)
r
r
(1)
f
f
(1)
i
(2)
(1)
(1)
(1)
(1)
(2)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward On voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
Drain current limit
Step response current
limit
Overtemperature
shutdown
Overtemperature reset
Fault sink current
Single pulse
avalanche energy
Switching
Source Drain diode
Protections (-40°C < T
Parameter
Parameter
Parameter
(1)
V
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
Starting T
V
SD
SD
DD
gen
DD
gen
DD
in
DD
DD
IN
IN
IN
IN
IN
IN
IN
= 10V; R
= 2.5A; V
= 2.5A; dI/dt = 100 A/µs
= 10V; V
= 5V; V
= 10V;
= 5V
= 10V; V
= 5V; V
= 10V R
j
= 15V; I
= 15V; I
= 15V; I
= 12V; I
= 30V;
= 10V; R
= 10V; R
< 150°C, unless otherwise specified)
Test conditions
Test conditions
Test conditions
j
= 25°C; V
DS
DS
gen
gen
D
D
D
D
DS
DS
IN
gen
gen
= 2.5A
= 2.5A
= 2.5A
= 2.5A; V
= 13V
= 13V
= 0V
= 10Ω
= 13V
= 13V;
= 1kΩ; L = 10mH
= 10Ω
= 1kΩ
DD
IN
= 20V
= 10V
Min.
Min.
Min.
150
135
3.5
3.5
0.2
3900
1100
Typ.
Typ.
Typ.
150
150
400
150
0.3
5.7
50
60
40
80
18
15
40
50
20
5
5
5000
1600
Max.
Max.
Max.
100
100
300
250
600
1.6
80
20
60
7
7
VND5N07
A/µS
Unit
Unit
Unit
mA
mA
nC
µC
µS
µS
ns
ns
ns
ns
ns
ns
ns
ns
ns
°C
°C
V
A
A
A
J

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