VN05N STMicroelectronics, VN05N Datasheet - Page 12

• Manufacturer Part Number: VN05N
• Description: RELAY SSR HI-SIDE 5-PENTAWATT
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN05N

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 360 mOhm
• Current - Output / Channel: 13A
• Current - Peak Output: 60A
• Voltage - Supply: 7 V ~ 26 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads)
• Supply Voltage (min): 7 V
• Supply Current: 15 mA
• Maximum Power Dissipation: 56000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 497-3088-5

Application information
3.1
3.2
12/16
Functional description
The device has a diagnostic output which indicates open circuit (no load) and over
temperature conditions. The output signals are processed by internal logic. To protect the
device against short circuit and over-current condition, the thermal protection turns the
integrated Power MOS off at a minimum junction temperature of 140°C. When the
temperature returns to about 125°C the switch is automatically turned on again. In short
circuit conditions the protection reacts with virtually no delay, the sensor being located in the
region of the die where the heat is generated.
Protecting the device against reverse battery
The simplest way to protect the device against a continuous reverse battery voltage (-26V)
is to insert a Schottky diode between pin 1 (GND) and ground, as shown in the typical
application circuit
The consequences of the voltage drop across this diode are as follows:
●
●
If there is no need for the control unit to handle external analog signals referred to the power
GND, the best approach is to connect the reference potential of the control unit to node [1]
(see
this way no shift of V
INPUT pin; this solution allows the use of a standard diode, with a breakdown voltage able
to handle any ISO normalized negative pulses that occours in the automotive environment.
If the input is pulled to power GND, a negative voltage of -V
V
The undervoltage shutdown level is increased by V
Figure
IH
thresholds and V
13.), which becomes the common signal GND for the whole control board. In
(Figure
IH
, V
IL
STAT
12.).
and V
are increased by V
STAT
takes place and no negative voltage appears on the
F
with respect to power GND).
F
.
F
is seen by the device. (V
VN05N
IL
,