BTS441TG Infineon Technologies, BTS441TG Datasheet - Page 3

• Manufacturer Part Number: BTS441TG
• Description: IC HIGH SIDE PWR SWITCH D2PAK-5
• Manufacturer: Infineon Technologies
• Series: PROFET®r
• Type: High Sider

Specifications of BTS441TG

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 15 mOhm
• Current - Output / Channel: 21A
• Current - Peak Output: 65A
• Voltage - Supply: 4.75 V ~ 43 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS441TG; BTS441TGNT; BTS441TGT; BTS441TGTR; SP000012295

Data sheet
Maximum Ratings at T
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
T
Load dump protection
Load current (Short-circuit current, see page 5)
Operating temperature range
Storage temperature range
Power dissipation (DC) ; TC≤25°C
Maximal switchable inductance, single pulse
Electrostatic discharge capability (ESD)
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Input voltage (DC)
Current through input pin (DC)
Thermal resistance
1)
2)
3)
4)
5)
see internal circuit diagrams page 7
R
V
(see diagram, p.8) I
(Human Body Model)
j Start
bb
I
2)
Supply voltages higher than V
resistor in the GND connection. A resistor for the protection of the input is integrated.
R
V
E
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
= 2 Ω, R
Load dump
I
AS
= 12V, T
=-40 ...+150°C
= internal resistance of the load dump test pulse generator
is the maximum inductive switch off energy
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
L
j,start
= 0,5 Ω, t
= 150°C, T
1)
L(ISO)
d
V
= 200 ms, IN= low or high
j
LoadDump
= 25 °C unless otherwise specified
SMD version, device on pcb
Out to all other pins shorted:
= 21 A, RL= 0 Ω: E
C
junction - ambient (free air):
bb(AZ)
= 150°C const.
require an external current limit for the GND pin, e.g. with a 150 Ω
= V
A
+ V
s
, V
chip - case:
A
4 )
= 13.5 V
AS
3
=0.7J: Z
IN:
2
(one layer, 70μm thick) copper area for V bb
5)
:
V
V
V
I
T
T
P
V
V
I
R
R
Symbol
L
IN
bb
Load dump
j
stg
L
bb
tot
ESD
IN
thJC
thJA
3)
-40 ...+150
-55 ...+150
self-limited
Values
-10 ... +16
Rev. 1.11, 2008-12-09
±2.0
≤ 75
≤ 33
125
2.1
1.0
8.0
≤ 1
43
34
60
Unit
K/W
mH
mA
kV
BTS441T
°C
W
V
V
V
A
V