BTS3256D Infineon Technologies, BTS3256D Datasheet - Page 13
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BTS3256D
Manufacturer Part Number
BTS3256D
Description
IC SWITCH SMART LOWSIDE TO252-5
Manufacturer
Infineon Technologies
Series
HITFET®r
Type
Low Sider
Datasheet
1.BTS3256D.pdf
(30 pages)
Specifications of BTS3256D
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
10 mOhm
Current - Output / Channel
7.5A
Current - Peak Output
42A
Voltage - Supply
5.5 V ~ 30 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTS3256D
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
BTS3256D
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
6
The power stage is built by a N-channel vertical power MOSFET (DMOS).
6.1
The on-state resistance depends on the junction temperature T
on-state resistance R
Figure 8
Figure 9
Datasheet
Power Stage
Output On-state Resistance
Typical On-State Resistance R
Typical On-State Resistance R
DS(on)
18
16
14
12
10
31
26
21
16
11
8
6
6
.
-50 -25
0
0
typ.
25
10
V
DSon
DSon
S
T [ °C ]
[ V ]
50
= f( T
= f( V
typ.
75 100 125 150 175
J
13
S
), V
), V
S
IN
20
= 10 V, V
= high, T
J
.
Figure 8
IN
ambient
= high
Smart Low Side Power Switch
shows this dependence for the typical
30
= 25 °C
rdson_Vs.emf
rdson_Tj.emf
HITFET - BTS 3256D
Rev. 1.0, 2009-05-05
Power Stage