BTS5215L Infineon Technologies, BTS5215L Datasheet - Page 10

• Manufacturer Part Number: BTS5215L
• Description: IC SWITCH PWR HISIDE DSO-12
• Manufacturer: Infineon Technologies
• Type: High Sider

Specifications of BTS5215L

• Package / Case: DSO-12
• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 70 mOhm
• Current - Output / Channel: 4.7A
• Current - Peak Output: 15A
• Voltage - Supply: 5.5 V ~ 40 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.07 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 3100 mW
• Mounting Style: SMD/SMT
• Supply Current: 1.2 mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BTS5215L; BTS5215LINTR; BTS5215LNT; BTS5215LT; SP000013737; SP000301613

Data Sheet
GND disconnect with GND pull up
Any kind of load. If V
Due to V
V
load
For inductive load currents up to the limits defined by Z
(max. ratings and diagram on page 10) each switch is
protected against loss of V bb .
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
bb
disconnect with energized inductive
GND
> 0, no V
GND
ST
> V
= low signal available.
IN
- V
IN(T+)
device stays off
L
10
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L > 0 Ω:
Maximum allowable load inductance for
a single switch off
/
Z L [mH]
E
I , / T j,start = 150°C, V bb = 12 V, R L = 0 Ω
AS
=
E
2
AS
I
L
·
R
·
L
= E
L
(
Smart High-Side Power Switch
V
bb
bb
+ E
+ |V
E
L
L
- E
OUT(CL)
=
(one channel)
1 /
R
2
= V
·
L
|)
·
ON(CL)
I
2
L
OQ
(1+
V1.1, 2007-05-29
4)
·
|V
i
L
BTS5215L
(t) dt,
^
OUT(CL)
I
L
·
R
L
I L [A]
|
)