ISP75N Infineon Technologies, ISP75N Datasheet - Page 4

• Manufacturer Part Number: ISP75N
• Description: IC SWITCH HISIDE SMART SOT223-4
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of ISP75N

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 490 mOhm
• Current - Output / Channel: 700mA
• Current - Peak Output: 1.5A
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Other names: SP000292457

Absolute Maximum Ratings
T
Parameter
Continuous drain source voltage
Drain source voltage for
short circuit protection
Continuous input voltage
Peak input voltage
Continuous Input Current
-0.2V ≤
V
Junction Temperature
Operating temperature range
Storage temperature range
Power dissipation (DC)
Unclamped single pulse inductive energy
Load dump protection
IN = low or high (8 V);
IN = high (8 V);
Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
JEDEC humidity category J-STD-20-C
IEC climatic category, DIN IEC 68-1
Thermal Resistance
Junction soldering point
Junction - ambient
1)
2)
3)
Data Sheet V 1.4
j
IN
= 25 °C, unless otherwise specified
See also
V
R
<-0.2V or
LoadDump
I
= internal resistance of the load dump test pulse generator LD200.
V
IN
Figure 7
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also
≤ 10V
V
IN
R
>10V
and
L
4)
= 22 Ω
Figure
2)
R
L
= 50 Ω
10.
1)
Symbol
V
V
V
V
I
T
T
T
P
E
V
V
–
–
R
R
4
IN
j
a
stg
DS
DS
IN
IN
tot
AS
LoadDump
ESD
thJS
thJA
Values
60
36
-0.2 … +10 V
-0.2 … +20 V
no limit
|
150
-30 … +85
-40 … +105
1.8
550
80
47
4000
MSL3/260
40/150/56
≤ 10
≤ 70
I
IN
|≤ 2mA
HITFET
Unit Remarks
V
V
mA –
°C
W
mJ
V
V
–
–
K/W –
K/W –
–
–
–
–
–
–
I
V
V
V
V
R
t
–
–
–
d
D(ISO)
bb
LoadDump
P
P
I
3)
= 400 ms;

+
= 13.5 V
2008-04-14
=32V
= 2 Ω;
ISP 75N
V
= 0.7 A;
S
;
page
=
7.