NUD3105LT1G ON Semiconductor, NUD3105LT1G Datasheet - Page 2

• Manufacturer Part Number: NUD3105LT1G
• Description: IC INDUCTIVE LOAD DRVR 6V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Sider

Specifications of NUD3105LT1G

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 900 mOhm
• Current - Output / Channel: 400mA
• Current - Peak Output: 500mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 5 V
• Drain-source Breakdown Voltage: 6 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Supply Voltage Max: 6V
• No. Of Outputs: 1
• Output Voltage: 6V
• Output Current: 400mA
• Driver Case Style: SOT-23
• Device Type: Relay
• Termination Type: SMD
• No. Of Pins: 3
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NUD3105LT1GOS; NUD3105LT1GOS; NUD3105LT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
2. Refer to the section covering Avalanche and Energy.
MAXIMUM RATINGS (T
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
ON CHARACTERISTICS
Drain to Source Voltage − Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain−to−Source Avalanche Energy (
Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5)
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Total Power Dissipation (Note 1)
Derating Above 25°C
Thermal Resistance, Junction−to−Ambient
Drain to Source Sustaining Voltage (Internally Clamped), (I D = 10 mA)
I
Drain to Source Leakage Current
Gate Body Leakage Current
Gate Threshold Voltage
Drain to Source On−Resistance
Output Continuous Current
Forward Transconductance
g
= 1.0 mA
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(V
(V
(V
D
D
D
D
D
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
DS
DS
GS
GS
GS
GS
DS
DS
OUT
= 250 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 5.5 V , V
= 5.5 V, V
= 0.25 V, V
= 0.25 V, V
= 3.0 V, V
= 5.0 V, V
= V
= V
= 5.0 V, I
DS
DS
, I
, I
D
D
GS
DS
DS
= 1.0 mA)
= 1.0 mA, T
OUT
GS
GS
GS
GS
GS
GS
GS
GS
= 0 V, T
= 0 V)
= 0 V)
= 3.0 V)
= 3.0 V)
= 5.0 V)
= 3.0 V, T
= 5.0 V, T
= 0 V, T
= 3.0 V)
= 3.0 V, T
= 0.25 A)
J
= 25°C unless otherwise specified)
J
J
J
= 85°C )
= 25°C)
= 85°C)
J
J
J
=85°C)
=85°C)
Characteristic
= 85°C)
Rating
J
= 25°C unless otherwise noted)
T
Jinitial =
http://onsemi.com
25°C) (Note 2)
2
Symbol
Symbol
V
R
V
B
I
V
DS(on)
BRDSS
R
I
V
E
I
DS(on)
GS(th)
T
VGSO
g
DSS
GSS
P
T
T
DSS
E
I
qJA
GS
zpk
stg
FS
D
A
D
J
z
Min
300
200
350
6.0
5.0
0.8
0.8
−
−
−
−
−
−
−
−
−
−65 to +150
−40 to 85
Value
500
150
225
556
Typ
400
570
6.0
6.0
4.5
1.8
8.0
1.2
50
−
−
−
−
−
−
−
−
−
−
−
−
Max
9.0
8.0
1.4
1.4
1.2
1.3
0.9
1.3
0.9
15
15
19
50
−
−
−
mW/°C
mmhos
°C/W
Unit
Unit
mW
V
V
mA
mA
mJ
mJ
°C
°C
°C
mA
mA
W
V
V
V
dc
dc