VNQ660SP-E STMicroelectronics, VNQ660SP-E Datasheet - Page 15

• Manufacturer Part Number: VNQ660SP-E
• Description: IC SSR HISIDE QUAD POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ660SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 40 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 6 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 10A
• Output Resistance: 0.04ohm
• Input Delay: 40µs
• Output Delay: 40µs
• Supply Voltage Range: 6V To 36V
• Driver Case Style: PowerSO
• Rohs Compliant: Yes
• No. Of Pins: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

VNQ660SP
Figure 19. Status leakage current
Figure 21. Status clamp voltage
Ilstat (µA)
0.045
0.035
0.025
0.015
0.005
Vscl (V)
7.4
7.3
7.2
6.9
6.8
6.7
6.6
7.1
0.05
0.04
0.03
0.02
0.01
7
-50
0
-50
-25
-25
I stat= 1mA
Vstat= 5V
0
0
25
25
50
Tc (ºC )
50
Tc (ºC )
75
75
100
100
125
125
150
150
175
175
Figure 20. Status low output voltage
Figure 22. Openload Off state detection
Vstat (V)
0.525
0.375
0.225
0.075
Vol (V)
4.5
3.5
2.5
1.5
0.5
0.45
0.15
5
4
3
2
0
0.6
0.3
1
-50
0
-50
threshold
-25
-25
Vin= 0V
I stat= 1.6mA
0
0
25
25
50
Tc (ºC )
50
Tc (ºC )
Electrical specifications
75
75
100
100
125
125
150
150
175
175
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