VNQ830E-E STMicroelectronics, VNQ830E-E Datasheet - Page 19

• Manufacturer Part Number: VNQ830E-E
• Description: IC DVR QUAD HIGH SIDE 28SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VNQ830E-E

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 65 mOhm
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VNQ830E-E
3.1.2
3.2
3.3
where - I
maximum rating section of the device’s datasheet.
Power dissipation in R
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same R
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using
Solution 2: a diode (D
A resistor (R
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produces a shift (~600mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift does not vary if more than one HSD shares the same
diode/resistor network.
Load dump protection
D
V
line that are greater than those shown in
MCU I/O protection
If a ground protection network is used and negative transients are present on the V
the control pins are pulled negative. ST suggests to insert a resistor (R
the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
Example
For the following conditions:
Recommended values are:
CC
GND
ld
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
maximum DC rating. The same applies if the device is subject to transients on the V
P
- V
V
5 kΩ ≤ R
R
produces a shift (I
D
CCpeak
prot
CCpeak
= (- V
GND
= 10 kΩ
GND
= - 100 V and I
is the DC reverse ground pin current and can be found in the absolute
CC
prot
/ I
)
latchup
2
= 1 kΩ) should be inserted in parallel to D
≤ 65 kΩ.
/ R
GND
GND
≤ R
S(on)max
prot
(when V
latchup
GND
Doc ID 17459 Rev 1
≤ (V
GND
* R
) in the ground line
≥ 20 mA; VOHµC ≥ 4.5 V
OHμC
CC
GND
.
< 0 during reverse battery situations) is:
-V
) in the input thresholds and the status output
Table
IH
-V
GND)
13.
/ I
IHmax
S(on)max
Section 3.1.2
GND
if the device is driving an
becomes the sum of the
Application information
prot
described below.
) in line to prevent
CC
line,
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CC