VNV35NV04-E STMicroelectronics, VNV35NV04-E Datasheet - Page 8
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VNV35NV04-E
Manufacturer Part Number
VNV35NV04-E
Description
IC PWR MOSFET M0 40V 30A PWRSO10
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet
1.VNB35NV04.pdf
(19 pages)
Specifications of VNV35NV04-E
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
10 mOhm
Current - Peak Output
45A
Mounting Type
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
VNB35NV04 / VNP35NV04 / VNV35NV04 / VNW35NV04
Source-Drain Diode Forward Characteristics
8/19
PowerSO-10 Static Drain-Source On Resistance
Vs. Id
PowerSO-10 Static Drain-Source On resistance Vs.
Input Voltage
Vsd (mV)
950
900
850
800
750
700
650
Rds(on) (mOhm)
30
25
20
15
10
5
0
0
Rds(on) (mOhm)
27.5
22.5
17.5
12.5
7.5
25
20
15
10
0
5
2
5
5
2.5
Id=15A
Id=7.5A
Id=15A
Id=7.5A
Id=15A
Id=7.5A
Vin=0V
Vin=5V
10
10
3
3.5
15
Id (A)
15
Id (A)
4
Vin (V)
20
20
Tj=25°C
4.5
25
Tj=-40°C
25
5
Tj=150°C
30
5.5
Tj=150ºC
30
Tj=-40ºC
Tj=25ºC
6
35
35
6.5
Static Drain Source On Resistance
D2PAK, TO-220 & TO-247 Static Drain-Source On
resistance Vs. Input Voltage
D2PAK, TO-220 & TO-247 Static Drain-Source On
Resistance Vs. Id
Rds(on) (mOhm)
50
40
30
20
10
0
Rds(on) (mOhm)
24
18
15
12
Rds(on) (mOhm)
30
25
20
15
10
21
9
6
3
0
5
0
2.5
0
1
Vin=2.5V
4
3
Vin=5V
3.5
2
8
12
Id (A)
4
3
Vin (V)
Id (A)
4.5
16
Tj=-40ºC
Tj=150ºC
Tj=25ºC
4
20
5
Tj=150ºC
Tj=-40ºC
Tj=25ºC
5.5
24
5
Tj=25ºC
Tj=150ºC
Tj=-40ºC
28
6
Id=7.5A
Id=7.5A
Id=15A
Id=7.5A
Id=15A
Id=15A
6
6.5
32