VND830ASPTR-E STMicroelectronics, VND830ASPTR-E Datasheet
VND830ASPTR-E
Specifications of VND830ASPTR-E
Available stocks
Related parts for VND830ASPTR-E
VND830ASPTR-E Summary of contents
Page 1
... Built-in thermal shutdown and outputs current limitation protect the chip from overtemperature and short circuit. Device turns-off in case of ground pin disconnections. Tube VND830ASP-E Doc ID 17605 Rev 1 VND830ASP PowerSO-10 Order codes Tape and reel VND830ASPTR-E 1/27 www.st.com 1 ...
Page 2
Contents Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical ...
Page 3
VND830ASP-E List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 4
List of figures List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 5
VND830ASP-E 1 Block diagram and pin description Figure 1. Block diagram INPUT 1 INPUT 2 GND Figure 2. Configuration diagram (top view) OVERVOLTAGE V CLAMP CC UNDERVOLTAGE DRIVER 1 LOGIC DRIVER 2 Ot1 OVERTEMP. 1 Ot2 OVERTEMP GROUND ...
Page 6
... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics sure program and other relevant quality document. Table 2. ...
Page 7
VND830ASP-E Table 2. Absolute maximum ratings (continued) Symbol Electrostatic discharge (Human Body Model 1.5 – INPUT V ESD – CURRENT SENSE – OUTPUT – Maximum switching energy 1.8 mH; R MAX T jstart ...
Page 8
Electrical specifications 2.3 Electrical characteristics Values specified in this section are for 8 V < V otherwise specified. (Per each channel). Table 4. Power Symbol Parameter V Operating supply voltage CC V Undervoltage shutdown USD V Overvoltage shutdown OV R ...
Page 9
VND830ASP-E Table 6. Logic input (channel 1, 2) Symbol V Input low level voltage IL I Low level input current IL V Input high level voltage IH I High level input current IH V Input hysteresis voltage I(hyst) V Input ...
Page 10
Electrical specifications (1) Table 9. Current sense Symbol Parameter OUT SENSE OUT SENSE dK /K Current sense ratio drift OUT SENSE dK /K Current sense ratio ...
Page 11
VND830ASP-E Figure 4. Switching characteristics (resistive load R Figure 5. I OUT Iout/Isense 2250 2000 1750 1500 1250 1000 750 500 0.0 A: Max -40 °C to 150 °C B: Max °C to 150 °C ...
Page 12
Electrical specifications Table 10. Truth table (per each channel) Conditions Normal operation Overtemperature Undervoltage Overvoltage Short circuit to GND Short circuit Negative output voltage clamp 12/27 Input Output ...
Page 13
VND830ASP-E Table 11. Electrical transient requirements on V ISO T/R 7637/1 test pulse Table 12. Electrical transient requirements on V ISO T/R 7637/1 Test pulse Table 13. Electrical ...
Page 14
Electrical specifications Figure 6. Waveforms INPUT n LOAD CURRENT SENSE INPUT n LOAD CURRENT SENSE INPUT n LOAD CURRENT SENSE n INPUT n LOAD CURRENT LOAD VOLTAGE SENSE n INPUT n LOAD VOLTAGE LOAD ...
Page 15
VND830ASP-E 2.4 Electrical characteristics curves Figure 7. Off-state output current IL(off1) (uA Off state 6 Vcc=13V Vin=Vout= -50 - (ºC) Figure 9. Input clamp voltage Vicl (V) ...
Page 16
Electrical specifications Figure 13. Overvoltage shutdown Vov (V) 50 47.5 45 42.5 40 37.5 35 32.5 30 -50 - (ºC) Figure 15. Turn-on voltage slope dVout/dt(on) (V/ms) 600 550 Vcc=13V Rl=6.5Ohm 500 450 400 350 ...
Page 17
VND830ASP-E 3 Application information Figure 19. Application schematic + 3.1 GND protection network against reverse battery 3.1.1 Solution 1: resistor in the ground line (R This can be used with any type of load. The following is an ...
Page 18
Application information 3.1.2 Solution 2: diode (D A resistor (R GND inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network produces a shift ( 600 ...
Page 19
VND830ASP-E 3.4 PowerSO-10 maximum demagnetization energy ( Figure 20. Maximum turn- off current versus load inductance A: Single pulse Repetitive pulse Repetitive pulse at T Condition 13.5 V ...
Page 20
Package and PCB thermal data 4 Package and PCB thermal data 4.1 PowerSO-10 thermal data Figure 21. PowerSO-10 PC board 1. Layout condition thickness = 35 µm, Copper areas: from minimum pad lay-out Figure ...
Page 21
VND830ASP-E Figure 23. PowerSO-10 thermal impedance junction ambient single pulse Equation 1 pulse calculation formula : where p Figure 24. Thermal fitting model of a double channel HSD in PowerSO-10 Tj_1 ...
Page 22
Package and PCB thermal data Table 14. Thermal parameter Area/island (cm 22/ (° (° (° (° (° (° (W.s/ °C) C2 (W.s /°C) C3 (W.s/ ...
Page 23
VND830ASP-E 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status ...
Page 24
Package and packing information Table 15. PowerSO-10 mechanical data Dim (1) L ...
Page 25
VND830ASP-E 5.3 PowerSO-10 packing information Figure 26. PowerSO-10 suggested pad layout and tube shipment (no suffix) 14.6 - 14 Figure 27. Tape and reel shipment (suffix “TR”) TAPE DIMENSIONS According ...
Page 26
Revision history 6 Revision history Table 16. Document revision history Date 19-Jul-2010 26/27 Revision 1 Initial release. Doc ID 17605 Rev 1 VND830ASP-E Changes ...
Page 27
... VND830ASP-E Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...