VN5010AKTR-E STMicroelectronics, VN5010AKTR-E Datasheet - Page 22

IC DRIVER HISIDE AUTO POWERSSO24

VN5010AKTR-E

Manufacturer Part Number
VN5010AKTR-E
Description
IC DRIVER HISIDE AUTO POWERSSO24
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VN5010AKTR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
10 mOhm
Current - Peak Output
65A
Voltage - Supply
4.5 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
PowerSSO-24
Product
Half-Bridge Drivers
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

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Quantity:
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Application information
3.1.2
3.2
3.3
22/31
Solution 2: diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈600 mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
Load dump protection
D
V
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
Microcontroller I/Os protection
If a ground protection network is used and negative transient are present on the V
the control pins will be pulled negative. ST suggests to insert a resistor (R
prevent the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os.
-V
Calculation example:
For V
5 kΩ ≤ R
Recommended values: R
CC
ld
CCpeak
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
/I
prot
latchup
= - 100 V and I
GND
≤ 180 kΩ
=1 kΩ) should be inserted in parallel to D
≤ R
prot
≤ (V
prot
GND
latchup
OHµC
=10 kΩ, C
) in the ground line
Doc ID 13218 Rev 6
-V
≥ 20 mA; V
IH
-V
GND
EXT
=10 nF
) / I
OHµC
IHmax
.
≥ 4.5 V
GND
if the device drives an
prot
) in line to
VN5010AK-E
CC
CC
line,
line

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