VND600-E STMicroelectronics, VND600-E Datasheet - Page 9

• Manufacturer Part Number: VND600-E
• Description: IC DVR HIGH SIDE 2CH 25A 16SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND600-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 30 mOhm
• Current - Peak Output: 40A
• Voltage - Supply: 5.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.300", 7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -

Figure 8. Application Schematic
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large
resistor or several devices have to share the same
resistor then the ST suggests to utilize Solution 2 (see
below).
Solution 2: A diode (D
A resistor (R
D
This small signal diode can be safely shared amongst
several different HSDs.
D
GND
GND
1) R
2) R
= (-V
resistor.
GND
GND
if the device will be driving an inductive load.
CC
GND
PROTECTION
+5V
)
C
2
/R
600mV / I
is the DC reverse ground pin current and can
GND
GND
V
CC
S(on)max
=1k
R
SENSE1
) / (-I
R
R
R
R
prot
prot
prot
GND
S(on)max
prot
GND
GND
should be inserted in parallel to
* R
) in the ground line.
)
(when V
NETWORK
GND
.
) in the input thresholds
R
S(on)max
SENSE2
CC
CURRENT SENSE2
<0: during reverse
CURRENT SENSE1
INPUT2
INPUT1
GND
becomes the
GND
AGAINST
only). This
GND
.
will
V
GND
Also in this case, the presence of the ground network will
produce a shift (
status output values if the microprocessor ground is not
common with the device ground. This shift will not vary if
more than one HSD shares the same diode/resistor
network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
D
load dump peak voltage exceeds V
The same applies if the device will be subject to
transients on the V
shown in the ISO T/R 7637/1 table.
.
If a ground protection network is used and negative
transient are present on the V
be pulled negative. ST suggests to insert a resistor (R
in line to prevent the C I/Os pins to latch-up.
the leakage current of C and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up lim-
it of C I/Os.
Calculation example:
For V
5k
Recommended R
ld
The value of these resistors is a compromise between
-V
C I/Os PROTECTION:
R
GND
is necessary (Voltage Transient Suppressor) if the
CCpeak
GND
CCpeak
R
prot
/I
V
latchup
= - 100V and I
CC
65k .
D
j
GND
600mV) in the input thresholds and the
prot
CC
R
value is 10k
OUTPUT1
prot
line that are greater than the ones
OUTPUT2
latchup
(V
OH C
CC
line, the control pins will
-V
20mA; V
IH
CC
-V
max DC rating.
GND
VND600-E
OH C
) / I
D
IHmax
ld
4.5V
9/18
prot
)