VND10BSP-E STMicroelectronics, VND10BSP-E Datasheet - Page 2

• Manufacturer Part Number: VND10BSP-E
• Description: IC SMART PWR SSR 2CH POWERSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND10BSP-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 65 mOhm
• Current - Output / Channel: 3.4A
• Current - Peak Output: 14A
• Voltage - Supply: 6 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Device Type: High Side
• Module Configuration: High Side
• Peak Output Current: 14A
• Output Resistance: 0.1ohm
• Input Delay: 35µs
• Output Delay: 140µs
• Supply Voltage Range: 6V To 26V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VND10BSP
ABSOLUTE MAXIMUM RATING
2/9
CONNECTION DIAGRAMS
CURRENT AND VOLTAGE CONVENTIONS
I
OUT
Symb ol
V
(BR)DSS
I
V
-V
I
T
STAT
P
OUT
(RMS) RMS Output Current at T
I
I
ESD
T
IN
s tg
R
tot
CC
j
Drain-Source Breakdown Voltage
Output Current (cont.) at T
Reverse Output Current at T
Input Current
Reverse Supply Voltage
Status Current
Electrostatic Discharge (1.5 k , 100 pF)
Power Dissipation at T
Junction Operating Temperature
Storage Temperature
c
= 25
c
Parameter
= 85
c
= 85
c
o
= 85
C
o
C and f > 1Hz
o
C
o
C
-40 to 150
-55 to 150
Value
2000
-14
40
14
14
75
-4
10
10
Unit
mA
mA
o
o
W
V
A
V
A
A
V
C
C