VND14NV04-E STMicroelectronics, VND14NV04-E Datasheet - Page 9

MOSFET N-CH 40V 12A DPAK

VND14NV04-E

Manufacturer Part Number
VND14NV04-E
Description
MOSFET N-CH 40V 12A DPAK
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VND14NV04-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
35 mOhm
Current - Output / Channel
7A
Current - Peak Output
18A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
35mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Other names
497-2674-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VND14NV04-E
Manufacturer:
ST
0
VNB14NV04, VND14NV04, VND14NV04-1, VNS14NV04
3
Protection features
During normal operation, the input pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 50 KHz. The only difference from the user’s standpoint is that a small DC current
I
The device integrates:
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit.
ISS
(typ. 100 µA) flows into the input pin in order to supply the internal circuitry.
characteristics of the Power MOSFET stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly important when driving inductive
loads.
Linear current limiter circuit: limits the drain current I
voltages. When the current limiter is active, the device operates in the linear region, so
power dissipation may exceed the capability of the heatsink. Both case and junction
temperatures increase, and if this phase lasts long enough, junction temperature may
reach the over temperature threshold T
Over temperature and short circuit protection: these are based on sensing the chip
temperature and are not dependent on the input voltage. The location of the sensing
element on the chip in the power stage area ensures fast, accurate detection of the
junction temperature. Over temperature cutout occurs in the range 150 to 190 °C, a
typical value being 170 °C. The device is automatically restarted when the chip
temperature falls of about 15 °C below shutdown temperature.
Status feedback: in the case of an over temperature fault condition (T
device tries to sink a diagnostic current Igf through the input pin in order to indicate fault
condition. If driven from a low impedance source, this current may be used in order to
warn the control circuit of a device shutdown. If the drive impedance is high enough so
that the input pin driver is not able to supply the current I
This will not however affect the device operation: no requirement is put on the current
capability of the input pin driver except to be able to supply the normal operation drive
current I
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche
ISS
.
Doc ID 7393 Rev 8
jsh
.
D
to I
gf
lim
, the input pin will fall to 0 V.
whatever the input pin
Protection features
j
> T
jsh
), the
9/31

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