VN02AN-12-E STMicroelectronics, VN02AN-12-E Datasheet

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VN02AN-12-E

Manufacturer Part Number
VN02AN-12-E
Description
IC DVR HI SIDE SSR PENTAWATT
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VN02AN-12-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
350 mOhm
Current - Output / Channel
7A
Current - Peak Output
15A
Voltage - Supply
7 V ~ 36 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DESCRIPTION
The VN02AN is a monolithic device made using
STMicroelectronics
intended for driving resistive or inductive loads
with one side grounded.
Built-in thermal shut-down protects the chip from
over temperature and short circuit.
The
temperature status.
Fast turn-off of inductive load is achieved by
negative (-18 V) load voltage at turn-off.
BLOCK DIAGRAM
July 1998
VN02AN
OUTPUT CURRENT (CONTINUOUS):
7A @ T
LOGIC LEVEL 5V COMPATIBLE INPUT
THERMAL SHUT-DOWN
UNDER VOLTAGE PROTECTION
OPEN DRAIN DIAGNOSTIC OUTPUT
FAST DEMAGNETIZATION OF INDUCTIVE
LOAD
TYPE
diagnostic
c
=25
®
HIGH SIDE SMART POWER SOLID STATE RELAY
V
60 V
o
DSS
C
output
R
0.35
DS(on
VIPower
)
indicates
I
7 A
OUT
Technology,
an
36 V
V
CC
over
PENTAWATT in-line
PENTAWATT vertical
PENTAWATT horizontal
PENTAWATT
(vertical)
ORDER CODES:
PENTAWATT
PENTAWATT
(horizontal)
VN02AN(011Y)
VN02AN
VN02AN
VN02AN(012Y)
(in-line)
1/11

Related parts for VN02AN-12-E

VN02AN-12-E Summary of contents

Page 1

... THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION OPEN DRAIN DIAGNOSTIC OUTPUT FAST DEMAGNETIZATION OF INDUCTIVE LOAD DESCRIPTION The VN02AN is a monolithic device made using STMicroelectronics VIPower intended for driving resistive or inductive loads with one side grounded. Built-in thermal shut-down protects the chip from over temperature and short circuit. ...

Page 2

... VN02AN ABSOLUTE MAXIMUM RATING Symbol V Drain-Source Breakdown Voltage (BR)DSS I Output Current (cont.) OUT I Reverse Output Current R I Input Current IN -V Reverse Supply Voltage CC I Status Current (sink) STAT V Electrostatic Discharge (1 100 pF) ESD P Power Dissipation at T tot T Junction Operating Temperature j T Storage Temperature ...

Page 3

... < T < 125 OUT < T < 125 OUT < T < 125 OUT -40 C < T < 125 OUT unless otherwise specified) Test Conditions 0 - VN02AN Max unless otherwise specified) Min. Typ. Max 0. 0 Min. Typ. Max -24 -18 -14 Min. Typ. Max. 0.8 2 (*) 0.5 250 600 ...

Page 4

... VN02AN ELECTRICAL CHARACTERISTICS (continued) PROTECTION AND DIAGNOSTICS (-40 Symbol Parameter V Status Voltage Output STAT Low I Status Leakage Current V STAT V Under Voltage Shut USD Down V Status Clamp Voltage SCL I Over Current OV I Average Current In av Short Circuit I Leakage Current DOFF T Thermal Shut-down TSD ...

Page 5

... GND for the whole control board avoiding shift of V solution allows the use of a standard diode )/ dem dem VN02AN is seen by the device and V . This ih il stat , V il ...

Page 6

... VN02AN Figure 3: Typical Application Circuit With A Schottky Diode For Reverse Supply Protection Figure 4: Typical Application Circuit With Separate Signal Ground 6/11 ...

Page 7

... R vs Junction Temperature DS(on Output Current DS(on) Output Current Derating R vs Supply Voltage DS(on) Input Voltages vs Junction Temperature VN02AN 7/11 ...

Page 8

... VN02AN PENTAWATT (VERTICAL) MECHANICAL DATA DIM. MIN 2.4 D1 1.2 E 0. 3 10. 2 Dia 3.65 8/11 mm TYP. MAX. 4.8 1.37 2.8 0.094 1.35 0.047 0.55 0.014 1.05 0.031 1.4 0.039 3.4 3.6 0.126 6.8 7 0.260 10.4 10.4 0.396 17.85 15 ...

Page 9

... VN02AN inch MIN. TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.134 0.142 0.268 0.276 0.409 0.409 0.590 0244 0.598 0.161 ...

Page 10

... VN02AN PENTAWATT (IN-LINE) MECHANICAL DATA DIM. MIN 2.4 D1 1.2 E 0. 3 10.05 L2 23.05 L3 25.3 L5 2 Diam. 3.65 10/11 mm TYP MAX 4.8 1.37 2.8 0.094 1.35 0.047 0.55 0.014 1.05 0.031 1.4 0.039 3.4 3.6 0.126 6.8 7 0.260 10.4 10 ...

Page 11

... STMicroelectronics – Printed in Italy – All Rights Reserved Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES . VN02AN 11/11 ...

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