VN03SP-E STMicroelectronics, VN03SP-E Datasheet - Page 5

• Manufacturer Part Number: VN03SP-E
• Description: IC SSR HI SIDE SMART 60V PWRSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN03SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 500 mOhm
• Current - Output / Channel: 700mA
• Current - Peak Output: 4A
• Voltage - Supply: 5.5 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Supply Current: 0.05 mA
• Maximum Power Dissipation: 14000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Switch Type: High Side
• Power Switch Family: VN03SP
• Package Type: PowerSO
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Power Dissipation: 14W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open load conditions in off state as well
as in on state, output shorted to V
overtemperature. The truth table shows input,
diagnostic and output voltage level in normal
operation and in fault conditions.
signals are processed by internal logic. The
open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault
condition after an initial delay of about 5 ms. This
means that a disconnection during normal
operation, with a duration of less than 5 ms does
not affect the status output. Equally, any
re-connection of less than 5 ms during a
disconnection duration does not affect the status
output. No delay occur for the status to go low in
case of overtemperature conditions. From the
falling edge of the input signal the status output
initially low in fault condition (over temperature or
open load) will go back with a delay (t
of overtemperature condition and a delay (t
case of open load. These feature fully comply
with
requirement for automotive High Side Driver.
To protect the device against short circuit and
over current conditions, the thermal protection
turns the integrated Power MOS off
minimum
When the temperature returns to 125
switch is automatically turned on again. In short
circuit the protection reacts
delay, the sensor being located in the region of
the die where the heat is generated. Driving
inductive loads,
device ensures the fast demagnetizationwith a
Switching Time Waveforms
International
junction
an
Standard
temperature of 140
internal function of the
with
Office
The output
virtually no
povl
)in case
CC
(I.S.O.)
o
at
C the
pol
and
) in
o
C.
a
typical voltage (V
This function allows to greatly reduce the power
dissipation according to the formula:
P
where f = switching frequency and
V
Based on this formula it is possible to know
the value of inductance and/or current to avoid
a thermal shut-down. The maximum inductance
which causes the chip temperature to reach the
shut down temperature in a specific thermal
environment, is infact a function of the load
current for a fixed V
PROTECTING THE DEVICE AGAIST LOAD
DUMP - TEST PULSE 5
The device is able to withstand the test pulse
No. 5 at level II (V
ISO T/R 7637/1
component. This means that all functions of the
device are performed as designed
exposure to disturbance at level II. The VN06SP
is able to withstand the test pulse No.5 at level
III adding an
between GND pin and ground plus a filter
capacitor of 1000 F between V
ground (if R
PROTECTING
REVERSE
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between GND pin and
ground, as shown in the typical application circuit
(fig.3).
The consequences of the voltage drop across
this diode are as follows:
If the input is pulled to power GND, a negative
voltage of -V
thresholds and Vstat are increased by Vf with
respect to power GND).
The undervoltage shutdown level is increa-
by Vf.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [6]
(see application circuit in fig. 4), which becomes
the common signal GND for the whole control
board avoiding shift of V
solution allows the use of a standard diode.
f
dem
demag
= 0.5
= demagnetization voltage
LOAD
L
BATTERY
f
load
is seen by the device. (Vil, Vih
external resistor of
demag
THE
20 ).
CC
(I
load
s
, V
) of -18V.
without
= 46.5V) according to the
)
demag
2
DEVICE
ih
[(V
, V
CC
and f.
il
+V
any
and V
demag
CC
AGAINST
VN03SP
150 ohm
stat
)/V
external
pin and
. This
demag
after
sed
5/9
]