VND5050J-E STMicroelectronics, VND5050J-E Datasheet - Page 13

• Manufacturer Part Number: VND5050J-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5050J-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 50 mOhm
• Current - Peak Output: 18A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Supply Voltage (min): 4.5 V
• Supply Current: 6 mA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Maximum Turn-off Delay Time: 40000 ns
• Maximum Turn-on Delay Time: 20000 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND5050J-E / VND5050K-E
Figure 6.
Table 13.
Table 14.
1. The above test levels must be considered referred to V
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
ISO 7637-2:
ISO 7637-2:
test pulse
test pulse
2004(E)
2004(E)
5b
5b
2a
3a
3b
1
4
2a
3a
3b
(2)
1
4
(2)
Output voltage drop limitation
Electrical transient requirements (part 1/3)
Electrical transient requirements (part 2/3)
-100V
+37V
+75V
+65V
-75V
-6V
III
Test levels
V
on
+100V
-100V
-150V
V
(1)
+50V
+87V
Doc ID 12266 Rev 6
-7V
cc
IV
III
C
C
C
C
C
C
V
-V
on
out
/R
on(T)
T
5000 pulses
5000 pulses
Number of
j
test times
=150
pulses or
1 pulse
1 pulse
Test level results
1h
1h
o
C
CC
= 13.5V except for pulse 5b.
T
j
=25
T
j
=-40
o
90 ms
90 ms
C
0.5 s
0.2 s
Burst cycle/pulse
repetition time
o
I
C
(1)
out
Electrical specifications
100 ms
100 ms
5 s
5 s
IV
C
C
C
C
C
C
100 ms, 0.01
0.1 μs, 50 Ω
0.1 μs, 50 Ω
400 ms, 2 Ω
Delays and
Impedance
2 ms, 10 Ω
50 μs, 2 Ω
Ω
13/37