VND810 STMicroelectronics, VND810 Datasheet - Page 8

IC DRVR HISIDE 2CH 16-SOIC

VND810

Manufacturer Part Number
VND810
Description
IC DRVR HISIDE 2CH 16-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VND810

Input Type
Non-Inverting
Number Of Outputs
2
On-state Resistance
160 mOhm
Current - Peak Output
5A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
16-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-

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Electrical specifications
Note:
8/27
Table 5.
Table 6.
To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Symbol
Symbol
V
I
I
I
I
V
T
T
L(off1)
L(off2)
L(off3)
L(off4)
R
t
demag
V
V
SDL
I
T
TSD
USD
hyst
lim
I
CC
OV
ON
S
R
Shutdown temperature
Reset temperature
Thermal hysteresis
Status delay in overload
conditions
Current limitation
Turn-off output clamp
voltage
Operating supply
voltage
Undervoltage shutdown
Overvoltage shutdown
On-state resistance
Supply current
Off-state output current V
Off-state output current V
Off-state output current
Off-state output current
Power output
Protections
Parameter
Parameter
I
I
Off-state; V
V
Off-state; V
V
T
On-state; V
I
V
T
V
T
OUT
OUT
OUT
j
j
j
IN
IN
IN
IN
IN
IN
= 25°C
= 125°C
=25°C
= V
= V
= V
= 0V; V
= V
= V
= 1A; T
= 1A; V
= 0A
OUT
OUT
OUT
OUT
OUT
Test conditions
OUT
CC
CC
CC
= 0V
= 0V;
= 0V
= 0V; V
= 0V; V
j
CC
I
OUT
= 25°C
5.5V < V
Test conditions
= 13V;
= 13V;
= 13V; V
= 3.5V
> 8V
V
= 1A; L = 6mH
T
CC
CC
CC
j
> T
= 13V
= 13V;
= 13V;
CC
IN
TSD
< 36V
= 5V;
V
Min.
150
135
3.5
41
CC
7
Min.
5.5
-75
36
3
0
-
V
Typ.
175
15
CC
48
Typ. Max. Unit
5
13
12
12
4
5
-
V
Max.
200
7.5
7.5
20
CC
55
160
320
5.5
36
40
25
50
7
0
5
3
VND810
-
Unit
mΩ
mΩ
mA
°C
°C
°C
µs
µA
µA
µA
µA
µA
µA
A
V
A
V
V
V

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