VND5160J-E STMicroelectronics, VND5160J-E Datasheet - Page 11

• Manufacturer Part Number: VND5160J-E
• Description: IC DRVR HISIDE 2CH POWERSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VND5160J-E

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 160 mOhm
• Current - Peak Output: 5A
• Voltage - Supply: 4.5 V ~ 36 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: PowerSSO-12
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VND5160J-E
Table 10.
Table 11.
V
Symbol
t
Symbol
t
DSTKON
DOL(on)
V
V
V
SD(hyst)
V
t
V
I
V
I
I(hyst)
I
V
SDH
SDCL
POL
V
SDL
I
I
SDH
OL
SDL
OL
IH
ICL
IL
IH
IL
Openload On state
detection threshold
Openload On state
detection delay
Delay between INPUT falling
edge and STATUS rising
edge in Openload condition
Openload Off state voltage
detection threshold
Output short circuit to V
detection delay at turn Off
Input low level voltage
Low level input current
Input high level voltage
High level input current
Input hysteresis voltage
Input clamp voltage
STAT_DIS low level voltage
Low level STAT_DIS current
STAT_DIS high level voltage
High level STAT_DIS current
STAT_DIS hysteresis voltage
STAT_DIS clamp voltage
Openload detection
Logic input
Parameter
Parameter
cc
V
I
(see
I
OUT
OUT
V
See
IN
IN
Test conditions
= 5V, 8V<V
= 0V, 8V<V
= 0A, V
Figure
= 0A (see
Figure 4
Test conditions
V
V
I
V
V
I
I
I
SD
CSD
CSD
IN
SD
IN
4)
IN
IN
CC
= -1mA
= 1mA
= -1mA
= 0.9V
= 2.1V
= 1mA
= 0.9V
= 2.1V
=13V
Figure
CC
CC
<18V
<16V
4)
Min.
200
180
10
2
Electrical specifications
Min.
0.25
0.25
5.5
5.5
2.1
2.1
Figure 19
Figure 20
1
1
Typ.
See
See
500
Typ. Max. Unit
-0.7
-0.7
Max.
1000
t
200
POL
40
4
0.9
0.9
10
10
7
7
Unit
11/31
mA
µs
µs
µs
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
V