VN5E160AS-E STMicroelectronics, VN5E160AS-E Datasheet - Page 25

• Manufacturer Part Number: VN5E160AS-E
• Description: IC DVR SWITCH HI SIDE SGL 8SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E160AS-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 160 mOhm
• Current - Peak Output: 10A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN5E160AS-E
3.1.2
3.2
3.3
values. This shift varies depending on how many devices are ON in the case of several high-
side drivers sharing the same R
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see
diode (DGND) in the ground
Solution 2: a diode (D
A resistor (R
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (≈600 mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Load dump protection
D
V
that are greater than the ones shown in the ISO T/R 7637/1 table.
MCU I/Os protection
If a ground protection network is used and negative transients are present on the V
the control pins is pulled negative. ST suggests to insert a resistor (R
the microcontroller I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (input levels compatibility) with the latch-up limit of
microcontroller I/Os.
Equation 2
Calculation example:
For V
Recommended values: R
CC
ld
is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
5 kΩ ≤ R
CCpeak
= - 100 V, I
GND
prot
= 1 kΩ) should be inserted in parallel to D
≤ 180 kΩ.
-V
latchup
CCpeak
prot
GND
line).
=10 kΩ, C
≥ 20 mA, V
Doc ID 15609 Rev 2
GND
/ I
) in the ground line
latchup
.
EXT
≤ R
OHμC
= 10 nF.
prot
≥ 4.5 V
≤ (V
OHμC
- V
GND
IH
Section 3.1.2: Solution 2: a
- V
if the device drives an
GND
Application information
prot
) / I
) in line to prevent
IHmax
CC
CC
line,
line
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