VNP10N06 STMicroelectronics, VNP10N06 Datasheet - Page 3
![MOSFET N-CH 60V 10A TO-220](/photos/1/39/13943/to-220_sml.jpg)
VNP10N06
Manufacturer Part Number
VNP10N06
Description
MOSFET N-CH 60V 10A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet
1.VNP10N06.pdf
(11 pages)
Specifications of VNP10N06
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
150 mOhm
Current - Peak Output
10A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Other names
497-3310-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNP10N06
Manufacturer:
ST
Quantity:
8 000
Company:
Part Number:
VNP10N06
Manufacturer:
ST
Quantity:
12 500
Part Number:
VNP10N06
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
VNP10N06-E
Manufacturer:
NXP
Quantity:
9 000
Part Number:
VNP10N06-E
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
VNP10N06FI
Manufacturer:
ST
Quantity:
8 000
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ( )
SOURCE DRAIN DIODE
PROTECTION
( ) Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
( ) Parameters guaranteed by design/characterization
I
t
Symbol
Symbol
Symbol
T
(di/dt)
T
E
Q
RRM
V
dlim
t
jsh
rr
jrs
t
t
t
t
as
SD
rr
d(off)
d(off)
d(on)
d(on)
I
Q
lim
t
t
t
t
(
(
r
f
r
f
(
(
(
(
i
(
( )
on
)
)
)
)
)
)
)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Current Slope
Total Input Charge
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Drain Current Limit
Step Response
Current Limit
Overtemperature
Shutdown
Overtemperature Reset
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
V
V
(see figure 3)
V
V
(see figure 3)
V
V
V
I
I
V
(see test circuit, figure 5)
V
V
starting T
V
SD
SD
DD
gen
DD
gen
DD
in
DD
DD
in
in
in
= 1 A
= 7 V
= 1 A
= 7 V
= 7 V
= 7 V R
= 16 V
= 16 V
= 16 V
= 12 V
= 30 V
= 7 V
= 7 V
j
Test Conditions
Test Conditions
Test Conditions
= 25
V
V
V
gen
di/dt = 100 A/ s
DS
DS
in
R
I
D
T
R
R
I
gen
= V
D
j
o
= 13 V
step from 0 to 13 V
= 1 K
= 1 A
I
I
gen
gen
C
= 25
d
d
= 1 A
= 1 A
= 1 A
= 10
IL
= 10
= 1000
V
o
C
DD
V
L = 10 mH
in
= 24 V
= 7 V
Min.
Min.
Min.
150
135
250
6
1100
Typ.
Typ.
0.22
Typ.
550
200
100
125
1.2
1.6
1.2
1.5
0.8
3.5
13
10
12
1
Max.
1600
Max.
Max.
900
400
200
1.8
1.5
2.3
1.8
1.6
15
20
VNP10N06
Unit
A/ s
Unit
Unit
nC
mJ
ns
ns
ns
ns
ns
o
o
V
A
A
C
C
C
s
s
s
s
s
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