VND3NV04-E STMicroelectronics, VND3NV04-E Datasheet - Page 8

• Manufacturer Part Number: VND3NV04-E
• Description: MOSFET OMNIFETII 40V 3.5A DPAK
• Manufacturer: STMicroelectronics
• Series: OMNIFET II™r
• Type: Low Sider

Specifications of VND3NV04-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 120 mOhm
• Current - Peak Output: 5A
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Switch Type: Low Side
• Power Switch Family: VND3NV04
• Power Switch On Resistance: 120mOhm
• Output Current: 3.5A
• Mounting: Surface Mount
• Supply Current: 100uA
• Package Type: DPAK
• Pin Count: 2 +Tab
• Power Dissipation: 35W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Compliant

Electrical specifications
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
8/26
Source drain diode (T
Protections (-40 °C < T
Symbol
(dI/dt)
V
t
t
t
t
I
t
d(on)
d(off)
d(on)
d(off)
RRM
T
SD
T
E
Q
I
dlim
Q
I
t
lim
t
t
t
t
jsh
gf
rr
jrs
as
r
f
r
f
rr
i
(1)
on
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on current slope
Total input charge
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Drain current limit
Step response current
limit
Over temperature
shutdown
Over temperature reset
Fault sink current
Single pulse avalanche
energy
Electrical characteristics (continued)
Parameter
j
=25 °C, unless otherwise specified)
j
< 150 °C, unless otherwise specified)
V
V
(see figure
V
V
(see figure
V
V
V
I
I
I
V
(see test circuit, figure
V
V
V
starting T
V
(see figures
gen
SD
SD
DD
gen
DD
gen
DD
gen
DD
DD
IN
IN
IN
IN
=1.5 A; V
=1.5 A; dI/dt=12 A/µs
=5 V; V
=5 V; V
=5 V; V
=5 V R
=2.13 mA (see figure
=15 V; I
=15 V; I
=15 V; I
=12 V; I
=30 V; L=200 µH
=5 V; R
=5 V; R
=5 V; R
Doc ID 7382 Rev 3
j
=25µ°C; V
gen
DS
DS
DS
Figure
Figure
D
D
D
D
gen
gen
gen
Figure 6.
IN
Test conditions
=1.5 A
=1.5 A
=1.5 A
=1.5 A; V
=13 V
=13 V
=13 V; T
=R
=0 V
=R
=2.2 KΩ
=R
IN MIN
VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1
IN MIN
IN MIN
4.)
4.)
DD
j
=220 Ω; L=24 mH
&
=T
IN
Figure
=24 V
=220 Ω
=220 Ω
Figure
=5 V
jsh
Figure
5.)
8.)
7.)
Min
150
135
100
3.5
10
0.45
Typ
250
450
250
107
175
2.5
3.3
2.0
4.7
8.5
0.8
0.7
90
37
10
15
5
1350
Max
1.35
10.0
300
750
750
200
7.5
6.0
20
7
A/µs
Unit
mA
mJ
nC
µC
ns
ns
ns
µs
µs
µs
µs
ns
µs
°C
°C
ns
V
A
A