VNN1NV04TR-E STMicroelectronics, VNN1NV04TR-E Datasheet

IC PWR MOSF M0-3 40V 1.7A SOT223

VNN1NV04TR-E

Manufacturer Part Number
VNN1NV04TR-E
Description
IC PWR MOSF M0-3 40V 1.7A SOT223
Manufacturer
STMicroelectronics
Series
OMNIFET II™r
Type
Low Sider
Datasheet

Specifications of VNN1NV04TR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
250 mOhm
Current - Peak Output
3.5A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Switch Type
Low Side
Power Switch Family
VNN1NV04
Power Switch On Resistance
250mOhm
Output Current
1.7A
Mounting
Surface Mount
Supply Current
100uA
Package Type
SOT-223
Pin Count
3 +Tab
Power Dissipation
7W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNN1NV04TR-E
Manufacturer:
ST
0
Part Number:
VNN1NV04TR-E
Manufacturer:
ST
Quantity:
9 967
Features
Table 1.
April 2009
Max on-state resistance (per ch.)
Current limitation (typ)
Drain-source clamp voltage
TO-252 (DPAK)
Linear current limitation
Thermal shutdown
Short circuit protection
Integrated clamp
Low current drawn from input pin
Diagnostic feedback through input pin
ESD protection
Direct access to the gate of the Power
MOSFET (analog driving)
Compatible with standard Power MOSFET
Package
SOT-223
SO-8
Parameter
Device summary
VND1NV04
VNN1NV04
VNS1NV04
Tube
Symbol
V
I
CLAMP
R
LIMH
ON
Tube (lead free)
VND1NV04-E
250 mΩ
Value
1.7 A
40 V
Doc ID 7381 Rev 2
-
-
fully autoprotected Power MOSFET
Description
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
VNN1NV04 - VNS1NV04
Order codes
VND1NV04TR
VNN1NV04TR
VNS1NV04TR
Tape and reel
2
SOT-223
TO-252 (DPAK)
1
2
3
Tape and reel (lead free)
1
VND1NV04
VND1NV04TR-E
3
OMNIFET II
SO-8
-
-
www.st.com
1/33
33

Related parts for VNN1NV04TR-E

VNN1NV04TR-E Summary of contents

Page 1

... Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. Order codes Tube (lead free) Tape and reel VND1NV04-E VND1NV04TR - VNN1NV04TR - VNS1NV04TR Doc ID 7381 Rev 2 VND1NV04 OMNIFET TO-252 (DPAK ...

Page 2

Contents Contents 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical ...

Page 3

VND1NV04 - VNN1NV04 - VNS1NV04 List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of figures List of figures Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 5

VND1NV04 - VNN1NV04 - VNS1NV04 1 Block diagram and pin description Figure 1. Block diagram INPUT 1 Figure 2. Configuration diagram (top view) a. For the pins configuration related to SOT-223 and DPAK see outline at page 1. Gate Control ...

Page 6

... These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to Absolute maximum rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE program and other relevant quality document. Table 2. ...

Page 7

VND1NV04 - VNN1NV04 - VNS1NV04 2.2 Thermal data Table 3. Thermal data Symbol R Thermal resistance junction-case thj-case R Thermal resistance junction-lead thj-lead R Thermal resistance junction-ambient thj-amb 1. When mounted on a standard single-sided FR4 board with 50 mm ...

Page 8

Electrical specifications Table 4. Electrical characteristics (continued) Symbol Parameter t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f t Turn-on delay time d(on) t Rise time r t Turn-off delay time ...

Page 9

VND1NV04 - VNN1NV04 - VNS1NV04 Figure 4. Switching time test circuit for resistive load gen 90 10 d(on) d(off) Doc ID 7381 Rev 2 Electrical specifications gen V gen t ...

Page 10

Electrical specifications Figure 5. Test circuit for diode recovery times 330Ω Figure 6. Unclamped inductive load test circuits 10/ FAST OMNIFET DIODE gen I V gen R GEN Doc ID ...

Page 11

VND1NV04 - VNN1NV04 - VNS1NV04 Figure 7. Input charge test circuit Figure 8. Unclamped inductive waveforms V GEN IN Doc ID 7381 Rev 2 Electrical specifications ND8003 11/33 ...

Page 12

Electrical specifications 2.4 Electrical characteristics curves Figure 9. Source-drain diode forward characteristics Vsd (mV) 1000 950 Vin=0V 900 850 800 750 700 (A) Figure 11. Derating curve Figure 13. Static drain-source on resistance vs. ...

Page 13

VND1NV04 - VNN1NV04 - VNS1NV04 Figure 15. Static drain-source on resistance vs. Id Rds(on) (mohms) 500 450 Tj=150ºC 400 350 300 250 Tj=25ºC 200 150 Tj=-40ºC 100 0.25 0.5 0.75 1 1.25 Id(A) Figure 17. Turn-on current ...

Page 14

Electrical specifications Figure 21. Turn-off drain-source voltage slope (part 2/2) dv/dt(V/us) 350 300 250 200 150 100 500 1000 1500 Rg(ohm) Figure 23. Switching time resistive load (part 1/2) t(us) 2 1.75 td(off) Vdd=15V 1.5 Id=0.5A Vin=5V ...

Page 15

VND1NV04 - VNN1NV04 - VNS1NV04 Figure 27. Normalized input threshold voltage vs. temperature Vinth (V) 2 1.8 Vds=Vin 1.6 Id=1mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 - (ºC) Figure 29. Step response ...

Page 16

Protection features 3 Protection features During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used ...

Page 17

VND1NV04 - VNN1NV04 - VNS1NV04 4 Package and PCB thermal data 4.1 DPAK thermal data Figure 30. DPAK PC board 1. Layout condition thickness=35 µm , Copper areas: from minimum pad layout Figure 31. ...

Page 18

Package and PCB thermal data Figure 32. DPAK thermal impedance junction ambient single pulse ZTH ( ° 100 10 1 0,1 0,0001 0,001 Equation 1: pulse calculation formula ⋅ δ THδ TH where δ = ...

Page 19

VND1NV04 - VNN1NV04 - VNS1NV04 Table 5. DPAK thermal parameter Area/island (cm R1 (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W·s/°C) C2 (W·s/°C) C3 (W·s/°C) C4 (W·s/°C) C5 (W·s/°C) C6 (W·s/°C) 4.2 SOT-223 thermal data ...

Page 20

Package and PCB thermal data Figure 35. SOT-223 R 140 130 120 110 100 Figure 36. SOT-223 thermal impedance junction ambient single pulse ZTH ( ° 1000 100 10 1 0,1 0,0001 0,001 ...

Page 21

VND1NV04 - VNN1NV04 - VNS1NV04 Equation 2: pulse calculation formula ⋅ δ THδ TH where δ Figure 37. SOT-223 thermal fitting model of a single channel Table 6. SOT-223 thermal parameter Area/island (cm ...

Page 22

Package and PCB thermal data 4.3 SO-8 thermal data Figure 38. SO-8 PC board 1. Layout condition thickness=35 µm , Copper areas: from minimum pad layout Figure 39. SO-8 R 105 ...

Page 23

VND1NV04 - VNN1NV04 - VNS1NV04 Figure 40. SO-8 thermal impedance junction ambient single pulse ZTH (° 1000 100 10 1 0,1 0,0001 Equation 3: pulse calculation formula ⋅ δ THδ TH where δ ...

Page 24

Package and PCB thermal data Table 7. SO-8 thermal parameter Area/island (cm R1 (°C/W) R2 (°C/W) R3 (°C/W) R4 (°C/W) R5 (°C/W) R6 (°C/W) C1 (W·s/°C) C2 (W·s/°C) C3 (W·s/°C) C4 (W·s/°C) C5 (W·s/°C) C6 (W·s/°C) 24/33 VND1NV04 - VNN1NV04 ...

Page 25

VND1NV04 - VNN1NV04 - VNS1NV04 5 Package and packing information In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product ...

Page 26

Package and packing information Table 8. DPAK mechanical data Dim Package weight 26/33 VND1NV04 - VNN1NV04 - VNS1NV04 mm. Min. Typ. 2.20 ...

Page 27

VND1NV04 - VNN1NV04 - VNS1NV04 5.2 SOT-223 mechanical data Figure 43. SOT-223 mechanical data & package outline 5.3 SO8 mechanical data Table 9. SO-8 mechanical data Dim Package and packing information mm Min. Typ. 0.10 1.25 Doc ...

Page 28

Package and packing information Table 9. SO-8 mechanical data (continued) Dim ( ( ccc 1. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or ...

Page 29

VND1NV04 - VNN1NV04 - VNS1NV04 5.4 DPAK packing information The devices can be packed in tube or tape and reel shipments (see the page 1 ). DPAK FOOTPRINT TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, ...

Page 30

Package and packing information 5.5 SOT-223 packing information Figure 45. SOT-223 tape and reel shipment (suffix “TR”) Tape dimensions According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter ...

Page 31

VND1NV04 - VNN1NV04 - VNS1NV04 5.6 SO8 packing information Figure 46. SO-8 tube shipment (no suffix) Figure 47. SO-8 tape and reel shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape ...

Page 32

Revision history 6 Revision history Table 10. Document revision history Date Feb-2003 16-Apr-2009 32/33 Revision 1 Initial release. Added Table 1: Device summary on page 1 and PCB thermal data 2 Updated Section 5: Package and packing information on page ...

Page 33

... VND1NV04 - VNN1NV04 - VNS1NV04 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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