BTS3160D Infineon Technologies, BTS3160D Datasheet - Page 18

• Manufacturer Part Number: BTS3160D
• Description: IC SWITCH PWR LOSIDE TO252-5
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BTS3160D

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 8 mOhm
• Current - Output / Channel: 7.8A
• Current - Peak Output: 70A
• Voltage - Supply: 6 V ~ 45 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (5 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTS3160D; BTS3160DTR; SP000106963; SP000305175

6.3
When switching off inductive loads with low-side switches, the Drain Source voltage V
potential, because the inductance intends to continue driving the current.
The BTS3160D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage V
level. See
Figure 15
Figure 16
While demagnetization of inductive loads, energy has to be dissipated in the BTS3160D. This energy can be
calculated with following equation:
Following equation simplifies under assumption of R
Datasheet
E
E
=
=
V
1
-- -
2
LI
DS(CL)
L
2
Figure 15
⋅



⋅
Inductive Output Clamp
Output Clamp
Switching an inductance
1
V
---------------------------------- - ln
–
bb
---------------------------------- -
V
bb
–
R
V
High
Low
V
V
–
Von
L
V
DAZ
bb
DS(CL)
for more details.
V
bb
IN
I
D
DS(CL)
⋅






1
–
---------------------------------- -
V
bb
R
–
L
V
⋅
DS(CL)
I
L



+
I
L
L
⋅
= 0
------
R
L
18
L
Overtemperature or
short circuit detected
Drain
GND
Smart Low Side Power Switch
t
t
t
HITFET - BTS3160D
OutputClamp.emf
Induc tiv eLoad.emf
D
Rev. 1.1, 2008-02-28
rises above battery
Power Stage
D
at a certain