BSP76 E6327 Infineon Technologies, BSP76 E6327 Datasheet - Page 4

• Manufacturer Part Number: BSP76 E6327
• Description: MOSFET 42V 1.4A N-CHAN SOT223
• Manufacturer: Infineon Technologies
• Series: HITFET®r
• Type: Low Sider

Specifications of BSP76 E6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 1.8A
• Current - Peak Output: 7.5A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• On Resistance (max): 0.19 Ohms
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Maximum Power Dissipation: 3800 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSP76-E6327; BSP76-E6327INTR; BSP76-E6327INTR; BSP76E6327INTR; BSP76E6327NT; BSP76E6327NTINTR; BSP76E6327NTINTR; BSP76E6327T; BSP76E6327T; BSP76E6327TINTR; BSP76E6327TINTR; BSP76E6327XT; SP000011146; SP000292889; SP000379611

Datasheet
1 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 not subject to production test, specified by design
Electrical Characteristics
Parameter
at T
Inverse Diode
Inverse diode forward voltage
I
t
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Thermal hysteresis
Input current protection mode
T
Unclamped single pulse inductive energy
I
F
P
D
j
L
L
L
L
= 7 A, t
= 150 °C
= 300 µs
= 1.4 A, T
= 4.7 W, V
= 4.7 W, V
= 4.7 W, V
= 4.7 W, V
j
= 25°C, unless otherwise specified
m
= 250 µs, V
j
IN
IN
IN
IN
= 25 °C, V
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
V
V
70 to 50% V
50 to 70% V
IN
IN
2)
to 90% I
to 10% I
1)
IN
bb
= 0 V,
= 12 V
D
D
bb
bb
bb
bb
bb
bb
:
:
= 12 V
= 12 V
= 12 V
= 12 V
:
:
2)
4
Symbol
V
t
t
-dV
dV
T
DT
I
E
on
off
IN(Prot)
jt
SD
AS
DS
DS
jt
/dt
/dt
off
on
Smart Low Side Power Switch
min.
150
150
-
-
-
-
-
-
-
Values
typ.
175
0.4
0.6
45
60
10
40
1
-
Rev. 1.3, 2008-04-14
HITFET BSP 76
max.
300
100
100
1.5
1.5
1.5
-
-
-
V
Unit
µs
V/µs
°C
K
µA
mJ