NUD3112DMT1G ON Semiconductor, NUD3112DMT1G Datasheet - Page 2

• Manufacturer Part Number: NUD3112DMT1G
• Description: MOSFT N-CH DUAL 14V 500MA SC74-6
• Manufacturer: ON Semiconductor
• Type: Low Sider

Specifications of NUD3112DMT1G

• Input Type: Non-Inverting
• Number Of Outputs: 2
• On-state Resistance: 1.2 Ohm
• Current - Output / Channel: 400mA
• Current - Peak Output: 500mA
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 5 V
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 380 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Supply Voltage Max: 14V
• No. Of Outputs: 2
• Output Voltage: 14V
• Output Current: 400mA
• Driver Case Style: SC-74
• Device Type: Relay
• Termination Type: SMD
• No. Of Pins: 6
• Rohs Compliant: Yes
• Filter Terminals: SMD
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NUD3112DMT1GOS; NUD3112DMT1GOS; NUD3112DMT1GOSTR

1. Mounted onto minimum pad board.
MAXIMUM RATINGS
TYPICAL ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Symbol
Symbol
V
R
V
B
I
V
DS(on)
R
ESD
BRDSS
I
I
V
GS(th)
DS(on)
T
VGSO
g
GSS
DSS
P
P
DSS
E
T
T
I
stg
qJA
GS
FS
D
A
D
D
z
J
Drain to Source Voltage – Continuous
Gate to Source Voltage – Continuous
Drain Current – Continuous
Single Pulse Drain−to−Source Avalanche Energy (
Junction Temperature
Operating Ambient Temperature
Storage Temperature Range
Total Power Dissipation (Note 1)
Derating Above 25°C
Total Power Dissipation (Note 1)
Derating Above 25°C
Thermal Resistance Junction−to−Ambient (Note 1)
Human Body Model (HBM) According to EIA/JESD22/A114
Drain to Source Sustaining Voltage (Internally Clamped)
I
Drain to Source Leakage Current
Gate Body Leakage Current
Gate Threshold Voltage
Drain to Source On−Resistance
Output Continuous Current
Forward Transconductance
g
(I D = 10 mA)
= 1.0 mA
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(V
(V
(V
D
D
D
D
D
DS
DS
GS
GS
GS
GS
DS
DS
OUT
= 250 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 500 mA, V
= 12 V , V
= 12 V, V
= 0.25 V, V
= 0.25 V, V
= 3.0 V, V
= 5.0 V, V
= V
= V
= 12.0 V, I
(T
DS
DS
J
= 25°C unless otherwise specified)
, I
, I
D
D
GS
DS
DS
= 1.0 mA)
= 1.0 mA, T
GS
GS
GS
GS
GS
GS
GS
GS
OUT
= 0 V, T
= 0 V)
= 0 V)
= 0 V, T
= 3.0 V)
= 3.0 V)
= 5.0 V)
= 3.0 V, T
= 5.0 V, T
= 3.0 V)
= 3.0 V, T
= 0.25 A)
A
A
A
= 85°C)
= 25°C)
A
A
Characteristic
= 85°C)
A
=85°C)
=85°C)
= 85°C)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
Rating
T
Jinitial =
2
25°C)
Min
300
200
350
0.8
0.8
14
−
−
−
−
−
−
−
−
−
−
SOT−23
SOT−23
SC−74
SC−74
Typ
400
490
1.2
16
−
−
−
−
−
−
−
−
−
−
−
−
−65 to +150
−40 to 85
Value
2000
500
150
225
380
556
329
1.8
3.0
14
50
6
Max
1.4
1.4
1.2
1.3
0.9
1.3
0.9
17
20
40
35
65
8
−
−
−
mW/°C
mW/°C
mmhos
°C/W
Unit
Unit
mW
mW
V
V
mA
mA
mJ
°C
°C
°C
mA
mA
W
V
V
V
V
dc
dc