L6205N STMicroelectronics, L6205N Datasheet - Page 13

IC DRVR FULL BRDG DUAL 20PWRDIP

L6205N

Manufacturer Part Number
L6205N
Description
IC DRVR FULL BRDG DUAL 20PWRDIP
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheets

Specifications of L6205N

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
300 mOhm
Current - Output / Channel
2.8A
Current - Peak Output
5.6A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Through Hole
Package / Case
20-DIP (0.300", 7.62mm)
Operating Supply Voltage
8 V to 52 V
Supply Current
0.01 A
Mounting Style
Through Hole
Current, Output, High Level
5.6 A
Number Of Drivers
2
Package Type
PowerDIP20
Temperature, Operating, Maximum
150 °C
Temperature, Operating, Minimum
-40 °C
Voltage, Input, High Level
7 V
Voltage, Input, Low Level
-0.3 V
Voltage, Supply
52 V (Max.)
For Use With
497-5487 - EVAL BOARD FOR L6206N DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4209-5

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Part Number:
L6205N L6205 L6219 L6203 L298 L297 L293
Manufacturer:
ST
0
PARALLELED OPERATION
The outputs of the L6205 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition, the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 12. The current in the two devices
connected in parallel will share very well since the R
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
- 5.6A max RMS Load Current
- 11.2A OCD Threshold
Figure 12. Parallel connection for higher current
To operate the device in parallel and maintain a lower over current threshold, Half Bridge 1 and the Half Bridge
2 of the Bridge A can be connected in parallel and the same done for the Bridge B as shown in Figure 13. In
this configuration, the peak current for each half bridge is still limited by the bond wires for the supply and sense
pins so the dissipation in the device will be reduced, but the peak current rating is not increased. This configu-
ration, the resulting bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
- 2.8A max RMS Load Current
- 5.6A OCD Threshold
8-52V
DS(ON)
DS(ON)
VS
+
GROUND
-
DC
POWER
GROUND
SIGNAL
0.15
0.15
C
1
Typ. Value @ T
Typ. Value @ T
LOAD
C
2
C
BOOT
J
J
D
1
= 25°C
= 25°C
D
2
R
P
SENSE
SENSE
C
VBOOT
OUT1
OUT2
OUT1
OUT2
P
VCP
VS
VS
A
B
A
B
A
A
B
B
DS(ON)
17
14
19
12
3
8
4
18
7
13
of the devices on the same die is well matched.
A
and OUT2
A
) are connected in parallel, the peak
11
20
10
16
15
1
2
9
6
5
EN
EN
IN1
IN2
IN1
IN2
GND
GND
GND
GND
B
A
A
A
B
B
R
C
EN
EN
D02IN1359
EN
L6205
IN1
IN2
13/21

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