IR2011 International Rectifier, IR2011 Datasheet - Page 3

• Manufacturer Part Number: IR2011
• Description: HI/LO SIDE DRVR 8-DIP
• Manufacturer: International Rectifier

Specifications of IR2011

• Configuration: High and Low Side, Independent
• Input Type: Non-Inverting
• Delay Time: 80ns
• Current - Peak: 1A
• Number Of Configurations: 1
• Number Of Outputs: 2
• High Side Voltage - Max (bootstrap): 200V
• Voltage - Supply: 10 V ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant
• Other names: *IR2011

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Dynamic Electrical Characteristics
V
Static Electrical Characteristics
V
COM and are applicable to all logic input leads: HIN and LIN. The V
applicable to the respective output leads: HO or LO.
Symbol
Symbol
BIAS
BIAS
V
V
V
V
DM1
DM2
I
I
BSUV+
CCUV+
V
V
BSUV-
CCUV-
t
t
V
QBS
QCC
I
V
I
I
I
on
off
I
t
t
IN+
IN-
O+
LK
O-
OH
OL
r
f
IH
IL
(V
(V
CC
CC
, V
, V
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Turn-on delay matching | t
Turn-off delay matching | t
BS
Logic “1” input voltage
Logic “0” input voltage
High level output voltage, V
Low level output voltage, V
Offset supply leakage current
Quiescent V
Quiescent V
Logic “1” input bias current
Logic “0” input bias current
V
threshold
V
threshold
V
threshold
V
threshold
Output high short circuit pulsed current
Output low short circuit pulsed current
BS
BS
BS
CC
CC
) = 15V, and T
) = 15V, C
supply undervoltage positive going
supply undervoltage negative going
supply undervoltage positive going
supply undervoltage negative going
CC
BS
Definition
Definition
L
= 1000 pF, T
supply current
supply current
A
= 25°C unless otherwise specified. The V
off
on
O
BIAS
(H) - t
A
(H) - t
= 25°C unless otherwise specified. Figure 1 shows the timing definitions.
- V
O
off
on
(L) |
(L) |
O
Min. Typ. Max. Units Test Conditions
Min. Typ. Max. Units Test Conditions
—
—
—
—
—
—
and I
8.2
7.4
8.2
7.4
2.2
—
—
—
—
—
—
—
—
—
—
IN
O
, V
parameters are referenced to COM and are
80
75
35
20
140
—
—
7.0
9.0
8.2
9.0
8.2
1.0
1.0
—
—
—
—
—
90
—
IR2011(S) & (PbF)
TH
and I
210
230
50
35
20
20
—
—
0.7
2.0
0.2
1.0
9.8
9.0
9.8
9.0
—
50
20
—
—
IN
parameters are referenced to
ns
µA
V
A
V
V
V
V
V
IN
IN
CC
B
V
PW £ 10 µs
PW £ 10 µs
V
=V
V
V
V
S
= 0V or 3.3V
= 0V or 3.3V
V
I
IN
O
S
O
= 10V - 20V
20mA
IN
O
= 200V
S
= 15V,
= 0V
= 3.3V
= 0A
= 0V,
= 0V
= 200V
3