L9856-TR STMicroelectronics, L9856-TR Datasheet - Page 9

• Manufacturer Part Number: L9856-TR
• Description: IC DRIVER HIGH SIDE HV 8-SOIC
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of L9856-TR

• Configuration: High-Side
• Input Type: Inverting
• Delay Time: 100ns
• Current - Peak: 500mA
• Number Of Configurations: 1
• Number Of Outputs: 1
• High Side Voltage - Max (bootstrap): 150V
• Voltage - Supply: 4.4 V ~ 6.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Rise Time: 400 ns
• Fall Time: 400 ns
• Supply Voltage (min): 4.4 V
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

L9856
Table 6.
Input characteristics
Recharge characteristics
Deadtime characteristics
Symbol
DT
t
t
DT
V
V
V
on_rech
off_rech
R
V
I
V
t
RESH
RECH
t
t
R
t
RESL
RES
plhi
phli
phlr
I
RES
plhr
HOFF
INH
INL
IN
HON
IN
Input-to-output turn-on
propagation delay (50 % input
level to 10 % output level)
Input-to-output turn-off
propagation delay (50 % input
level to 90 % output level)
RES-to-output turn-on
propagation delay (50 % input
level to 10% output level)
RES-to-output turn-off
propagation delay (50 % input
level to 90 % output level)
High logic level input threshold
Low logic level input threshold
High logic level input resistance
High logic level input current
High logic level RES input
threshold
Low logic level RES input
threshold
High logic level RES Input
resistance
Low logic level input current
Recharge transistor turn-on
propagation delay
Recharge transistor turn-off
propagation delay
Recharge output transistor on-
state voltage drop
High side turn-off to recharge gate
turn-on
Recharge gate turn-off to high
side turn-on
Electrical characteristics (continued)
Unless otherwise specified, V
load R = 50 Ω, C = 2.5 nF. Unless otherwise noted, these specifications apply for an
operating ambient temperature range of -40 °C < T
Parameter
CC
V
V
V
V
V
1 mA forced on recharge
path on
V
= 5 V, V
CC
IN
CC
RES
S
CC
= 5V
= V
= 5V
= 5V
= 5 V
= 0
Test condition
CC
BS
= 7 V, V
amb
S
= 0 V, IN = 0 V, RES = 5 V,
< 125 °C.
0.6 V
0.6 V
Min.
0.5
0.1
60
60
3
3
CC
CC
Electrical specifications
Typ.
100
100
0.1
0.1
0.1
0.1
0.1
0.4
6
6
Max.
0.35
0.28
0.28
V
V
250
250
0.4
0.4
0.4
0.5
1.2
0.7
5
5
9
9
CC
CC
Unit
kΩ
µA
kΩ
µA
µs
µs
µs
µs
V
V
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