IRS2608DSPBF International Rectifier, IRS2608DSPBF Datasheet - Page 7

IC DVR HALF BRIDGE 600V 8-SOIC

IRS2608DSPBF

Manufacturer Part Number
IRS2608DSPBF
Description
IC DVR HALF BRIDGE 600V 8-SOIC
Manufacturer
International Rectifier
Datasheet

Specifications of IRS2608DSPBF

Configuration
Half Bridge
Input Type
Differential
Delay Time
250ns
Current - Peak
200mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 20 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Application Information and Additional Details
Informations regarding the following topics are included as subsections within this section of the datasheet.
IGBT/MOSFET Gate Drive
The IRS2608D HVICs are designed to drive MOSFET or IGBT power devices. Figures 1 and 2 illustrate several
parameters associated with the gate drive functionality of the HVIC. The output current of the HVIC, used to drive the
gate of the power switch, is defined as I
V
V
HO
OUT
www.irf.com
for the high-side power switch and V
and in this case does not differentiate between the high-side or low-side output voltage.
IGBT/MOSFET Gate Drive
Switching and Timing Relationships
Deadtime
Matched Propagation Delays
Input Logic Compatibility
Undervoltage Lockout Protection
Shoot-Through Protection
Integrated Bootstrap Functionality
Negative V
PCB Layout Tips
Additional Documentation
Figure 1: HVIC sourcing current
S
Transient SOA
LO
O
. The voltage that drives the gate of the external power switch is defined as
for the low-side power switch; this parameter is sometimes generically called
Figure 2: HVIC sinking current
IRS2608DSPbF
7

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