L6569AD013TR STMicroelectronics, L6569AD013TR Datasheet - Page 4
L6569AD013TR
Manufacturer Part Number
L6569AD013TR
Description
IC DRVR HALF BRIDGE W/OSC 8SOIC
Manufacturer
STMicroelectronics
Type
High Voltage Half Bridger
Datasheet
1.L6569A.pdf
(13 pages)
Specifications of L6569AD013TR
Configuration
Half Bridge
Input Type
Self Oscillating
Current - Peak
175mA
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
600V
Voltage - Supply
10 V ~ 16.6 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Supply Voltage (min)
10 V
Supply Current
25 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Bridge Type
Half Bridge
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
For Use With
497-6409 - BOARD EVAL BIPO SOLUTION FOR PFC497-4738 - BOARD EVAL LIGHTING L6569
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Delay Time
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-5359-2
L6569AD013TR
L6569AD013TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
L6569AD013TR
Manufacturer:
FSC
Quantity:
12 400
Company:
Part Number:
L6569AD013TR
Manufacturer:
st
Quantity:
1 942
Part Number:
L6569AD013TR
Manufacturer:
ST
Quantity:
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L6569 L6569A
ELECTRICAL CHARACTERISTCS (continued)
OSCILLATOR FREQUENCY
The frequency of the internal oscillator can be programmed using external resistor and capacitor.
The nominal oscillator frequency can be calculated using the following equation:
Where R
The device can be driven in "shut down" condition keeping the C
taken:
1. When C
2. The forced discharge of the oscillator capacitor C
Figure 1.
4/13
Symbol
V
V
RF OFF
V
limit the current discharge with a resistive path imposing R · C
V
R
RFO
V
I
DC
f
AVE
CFU
CFL
out
t
ON
BC
d
N
F
and C
F
Pin
2
3
1
6
is to GND the high side driver is off and the low side is on
RF High Level Output Voltage
RF Low Level Output Voltage
CF Upper Threshold
CF Lower Threshold
Internal Dead Time
Duty Cycle, Ratio Between Dead
Time + Conduction Time of High
Side and Low Side Drivers
On resistance of Boostrap
LDMOS
Boostrap Voltage before UVLO
Average Current from Vs
Oscillation Frequency
F
are the external resistor and capacitor.
fault signal
Parameter
f
O SC
=
---------------------------------------- -
2 R
F
R
1
C
C
I
I
V
No Load, fs = 60KHz
R
F
RF
RF
F
S
T
F
= 12K; C
= 8.2
must not be shorter than 1us: a simple way to do this is to
= 1mA
= -1mA
In2
GNDM
R
Test Condition
F
=
T
----------------------------------------- -
1.3863 R
= 1nF
F
1
2
3
4
F
pin close to GND, but some cares have to be
>1 s (see fig.1)
1
F
C
F
V
Min.
S
3.80
0.85
0.45
8
7
6
5
7.7
2.5
50
57
-0.05
Typ.
1.25
120
0.5
3.6
1.2
60
8
4
V
Max.
1.65
0.55
S
200
8.2
4.3
1.5
63
-0.2
Unit
kHz
mV
mA
V
V
V
V
s