NCV3065DR2G ON Semiconductor, NCV3065DR2G Datasheet - Page 9

• Manufacturer Part Number: NCV3065DR2G
• Description: IC LED DRVR HP CONST CURR 8-SOIC
• Manufacturer: ON Semiconductor
• Type: High Power, Constant Currentr

Specifications of NCV3065DR2G

• Constant Current: Yes
• Topology: PWM, SEPIC, Step-Down (Buck), Step-Up (Boost)
• Number Of Outputs: 1
• Internal Driver: Yes
• Type - Primary: Automotive, General Purpose
• Type - Secondary: High Brightness LED (HBLED)
• Frequency: 250kHz
• Voltage - Supply: 3 V ~ 40 V
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Operating Temperature: -40°C ~ 125°C
• Current - Output / Channel: 1.5A
• Internal Switch(s): Yes
• Input Voltage: 40 V
• Switching Frequency: 100 KHz to 250 KHz
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Efficiency: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NCV3065DR2GOSTR

of the NCP3065. Two main converter topologies are
demonstrated with actual test data shown below each of the
circuit diagrams.
8. V
9. V
10. The calculated t
The Following Converter Characteristics Must Be Chosen:
less than 10% of the average inductor current I
set by R
converter output current capability.
value since it will directly affect line and load regulation. Capacitor C
electrolytic designed for switching regulator applications.
(See Notes 8, 9, 10)
Figures 16 through 24 show the simplicity and flexibility
V
V
I
DI
f − Maximum output switch frequency.
V
out
out
in
ripple(pp)
SWCE
F
L
I
V
− Output rectifier forward voltage drop. Typical value for 1N5819 Schottky barrier rectifier is 0.4 V.
− Nominal operating input voltage.
pk (Switch)
− Desired output current.
− Desired peak−to−peak inductor ripple current. For maximum output current it is suggested that DI
− Desired output voltage.
ripple(pp)
t on
t off
I
I
L(avg)
out
R
V
SC
t
C
on
− Darlington Switch Collector to Emitter Voltage Drop, refer to Figures 7, 8, 9 and 10.
L
out
SC
T
. If the design goal is to use a minimum inductance value, let DI
− Desired peak−to−peak output ripple voltage. For best performance the ripple voltage should be kept to a low
on
/t
off
must not exceed the minimum guaranteed oscillator charge to discharge ratio.
DI L
V in * V SWCE * V out
V in * V SWCE * V out
V TH
I L(avg) )
I pk (Switch)
Step−Down
V
V out ) V F
f
8 f C O
ref
DI L
t on
t off
0.20
I out
1
L(avg)
R 2
R 1
t on
t off
R
) 1
Figure 16. Design Equations
sense
) 1
DI L
2
. This will help prevent I
2
) (ESR)
http://onsemi.com
APPLICATIONS
C T + 381.6 @ 10
t on
2
9
parameters. Additionally, a complete application design aid
for the NCP3065 can be found at www.onsemi.com.
f osc
Figure 16 gives the relevant design equations for the key
O
*6
should be a low equivalent series resistance (ESR)
pk (Switch)
* 343 @ 10
L
= 2(I
from reaching the current limit threshold
L(avg)
[
*12
V in * V SWCE
t on I out
V out ) V F * V in
). This will proportionally reduce
V in * V SWCE
I out
C O
V TH
I L(avg) )
I pk (Switch)
V
f
Step−Up
ref
DI L
t on
t off
0.20
t on
t off
R 2
R 1
) DI L @ ESR
t on
t off
R
) 1
sense
) 1
) 1
DI L
2
t on
L
be chosen to be