HEF4511BT,652 NXP Semiconductors, HEF4511BT,652 Datasheet - Page 9

• Manufacturer Part Number: HEF4511BT,652
• Description: IC BCD-7 SEG DECODER/DRVR 16SOIC
• Manufacturer: NXP Semiconductors

Specifications of HEF4511BT,652

• Package / Case: 16-SOIC (3.9mm Width)
• Display Type: LED
• Configuration: 7 Segment
• Interface: BCD
• Voltage - Supply: 3 V ~ 15 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Product: Latch/Decoder/Driver
• Logic Family: HE4000B
• Number Of Lines (input / Output): 7.0 / 7.0
• Propagation Delay Time: 120 ns
• Supply Voltage (max): 15 V
• Supply Voltage (min): 3 V
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Input Lines: 7.0
• Number Of Output Lines: 7.0
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Supply: -
• Digits Or Characters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-3125-5; 933373180652; HEF4511BTD

NXP Semiconductors
Table 8.
V
[1]
Table 9.
P
HEF4511B_6
Product data sheet
Symbol
t
t
t
t
t
t
Symbol
P
PLH
THL
TLH
su
h
W
SS
D
D
can be calculated from the formulas shown. V
= 0 V; T
The typical values of the propagation delay and transition times are calculated from the extrapolation formulas shown (C
Parameter
LOW to HIGH
propagation delay
HIGH to LOW output
transition time
LOW to HIGH output
transition time
set-up time
hold time
pulse width
Dynamic characteristics
Dynamic power dissipation P
Parameter
dynamic power
dissipation
amb
= 25
°
C; for test circuit see
V
10 V
15 V
5 V
DD
Conditions
Dn → Qn;
see
LE → Qn;
see
BL → Qn;
see
LT → Qn;
see
see
see
Dn → LE;
see
Dn → LE;
see
LE input LOW;
minimum width;
see
…continued
Figure 6
Figure 6
Figure 6
Figure 6
Figure 6
Figure 6
Figure 7
Figure 7
Figure 7
Typical formula for P
P
P
P
Figure
D
D
D
D
= 1000 × f
= 4000 × f
= 10000 × f
SS
Rev. 06 — 7 December 2009
8.
= 0 V; t
V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
10 V
15 V
5 V
5 V
5 V
5 V
5 V
5 V
5 V
5 V
5 V
DD
i
i
+ Σ(f
+ Σ(f
i
+ Σ(f
r
= t
o
o
f
o
× C
× C
≤
Extrapolation formula
108 ns + (0.55 ns/pF)C
133 ns + (0.55 ns/pF)C
× C
D
44 ns + (0.23 ns/pF)C
32 ns + (0.16 ns/pF)C
59 ns + (0.23 ns/pF)C
42 ns + (0.16 ns/pF)C
78 ns + (0.55 ns/pF)C
29 ns + (0.23 ns/pF)C
22 ns + (0.16 ns/pF)C
33 ns + (0.55 ns/pF)C
19 ns + (0.23 ns/pF)C
17 ns + (0.16 ns/pF)C
10 ns + (1.00 ns/pF)C
20 ns + (1.00 ns/pF)C
13 ns + (0.06 ns/pF)C
10 ns + (0.06 ns/pF)C
20 ns; T
9 ns + (0.42 ns/pF)C
6 ns + (0.28 ns/pF)C
(μW)
L
L
) × V
) × V
L
) × V
DD
DD
amb
DD
2
2
2
BCD to 7-segment latch/decoder/driver
= 25
°
C.
where:
f
f
C
V
Σ(f
i
o
DD
= input frequency in MHz;
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
= output frequency in MHz;
[1]
o
= output load capacitance in pF;
× C
= supply voltage in V;
L
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
) = sum of the outputs.
50
25
20
60
30
25
80
40
35
HEF4511B
Typ
135
160
105
55
40
70
50
40
30
60
30
25
60
30
20
25
16
13
25
12
30
15
12
40
20
17
© NXP B.V. 2009. All rights reserved.
9
Max
270
110
320
140
100
210
120
120
-
-
-
-
-
-
-
-
-
80
80
60
60
50
60
40
50
32
26
L
in pF).
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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