DS2790G+T&R Maxim Integrated Products, DS2790G+T&R Datasheet - Page 10

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DS2790G+T&R

Manufacturer Part Number
DS2790G+T&R
Description
IC FUEL GAUGE BATT 28-TDFN
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2790G+T&R

Function
Fuel, Gas Gauge/Monitor
Battery Type
Lithium-Ion (Li-Ion)
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
28-TDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Memory Organization
The DS2790 incorporates several memory areas:
The memory is implemented using the Harvard architecture, with separate address spaces for program and data
memory. A pseudo-Von Neumann memory map is also utilized placing ROM, application code, and data memory
into a single contiguous memory map. The pseudo-Von Neumann memory map allows data memory to be mapped
into program space, permitting code execution from data memory. In addition program memory may be mapped
into data space, permitting code constants to be accessed as data memory. Figure 3 shows the DS2790’s memory
map when executing from program memory space. See the MAXQ Family User's Guide: DS2790 Supplement for
memory map information when executing from data or ROM space.
The incorporation of EEPROM memory allows field upgrade of the firmware. EEPROM memory can be password
protected with a 16-word key, denying access to program memory by unauthorized individuals. ROM memory is
also available for high-volume, low-cost applications. Contact Dallas Semiconductor for more information on the
availability of ROM-based devices.
Figure 3. DS2790 Memory Map
Bh
Ch
Dh
Eh
Fh
8h
9h
0h
1h
2h
4k words of utility ROM contain a debugger, program loader, and SHA-1 routines
4k words of EEPROM memory for application program storage
256 words of SRAM for storage of temporary variables
64 words of EEPROM memory for data storage
8 words of ADC conversion data information
16-level stack memory for storage of program return addresses and general-purpose use
00h
00h
PERIPHERAL
REGISTERS
REGISTERS
SYSTEM
16 × 16
STACK
DPC
PFX
AP
SP
DP
M0
M1
M2
IP
A
0Fh
1Fh
A0FFh
A13Fh
FFFFh
A100h
A000h
8FFFh
0FFFh
8000h
0000h
USER PROGRAM
MEMORY SPACE
EEPROM DATA
UTILITY ROM
SRAM DATA
PROGRAM
MEMORY
256 × 16
64 × 16
4K × 16
4K × 16
10 of 41
FFFFh
9FFFh
8000h
01FFh
027Fh
0200h
0000h
DATA MEMORY
EEPROM DATA
(BYTE MODE)
UTILITY ROM
SRAM DATA
128 × 8
512 × 8
8K × 8
FFFFh
8FFFh
8000h
600Ah
013Fh
00FFh
6003h
0100h
0000h
DATA MEMORY
EEPROM DATA
(WORD MODE)
UTILITY ROM
SRAM DATA
ADC DATA
256 × 16
4K × 16
64 × 16
8 × 16

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