NCP1002P ON Semiconductor, NCP1002P Datasheet - Page 4

• Manufacturer Part Number: NCP1002P
• Description: IC OFFLINE SWIT PWM UVLO HV 8DIP
• Manufacturer: ON Semiconductor
• Type: Integrated Off-Line Switching Regulatorr

Specifications of NCP1002P

• Output Isolation: Isolated
• Frequency Range: 90 ~ 115kHz
• Voltage - Input: 7.5 ~ 10 V
• Voltage - Output: 700V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NCP1002POS

6. Maximum package power dissipation limits must be observed.
7. Tested junction temperature range for this device series:
8. Guaranteed by design only.
9. Actual peak switch current is increased due to the propagation delay time and the di/dt (see Figure 16).
ELECTRICAL CHARACTERISTICS
POWER SWITCH CIRCUIT
CURRENT LIMIT AND THERMAL PROTECTION
TOTAL DEVICE (Pin 1)
Power Switch Circuit On--State Resistance
Power Switch Circuit Breakdown Voltage
Power Switch Circuit Off--State Leakage Current (V
Switching Characteristics (V
Current Limit Threshold (T
Current Limit, Peak Switch Current
Opto Fail--safe Protection (Figure 12)
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
Thermal Protection (Note 6, 8)
Power Supply Current After UVLO Turn--On
NCP1000 (I
NCP1001 (I
NCP1002 (I
(I
T
T
Turn--on Time (90% to 10%)
Turn--off Time (10% to 90%)
NCP1000
NCP1001
NCP1002
NCP1000 (di/dt = 100 mA/ms)
NCP1001 (di/dt = 200 mA/ms)
NCP1002 (di/dt = 300 mA/ms)
T
T
(Leading Edge Blanking plus Current Limit Delay)
Shutdown (Junction Temperature Increasing)
Hysteresis (Junction Temperature Decreasing)
Power Switch Circuit Enabled
Power Switch Circuit Disabled
T
T
T
T
T
T
NCP1000
NCP1001
NCP1002
D(off)
J
J
J
J
J
J
J
J
J
J
= 25C
= --40C to 125C
= 25C
= 0C to 125C
T
= 25C
= 125C (Note 8)
= 25C
= 125C (Note 8)
= 25C
= 125C (Note 8)
low
= 100 mA, T
= --40C
D
D
D
= 50 mA)
= 100 mA)
= 150 mA)
J
= 25C)
T
J
high
= 25C) (Note 9)
DS
Characteristics
= +125C
= 50 V, R
L
set for I
D
DS
= 0.7 I
= 650 V)
http://onsemi.com
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)
4
Symbol
V
R
I
t
I
I
I
Ofail
I
PLH
CC1
CC2
(off)
t
t
I
t
(BR)
t
(on)
lim
on
off
pk
sd
H
0.42
0.84
1.26
Min
700
125
0.6
10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.500
1.000
1.500
0.25
0.48
0.96
1.43
Typ
220
140
7.0
4.0
8.0
1.2
1.4
1.6
1.0
13
24
14
50
50
18
30
--
--
--
Max
0.54
1.08
1.25
9.0
6.0
1.0
1.6
1.6
1.8
2.0
18
36
18
12
50
25
35
--
--
--
--
--
--
--
--
--
Unit
mA
mA
mA
ns
ns
C
Ω
V
A
A