N01L63W2AT25I ON Semiconductor, N01L63W2AT25I Datasheet - Page 9

• Manufacturer Part Number: N01L63W2AT25I
• Description: IC SRAM 1MBIT 70NS 44TSOP
• Manufacturer: ON Semiconductor
• Type: Asynchronousr

Specifications of N01L63W2AT25I

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Access Time: 30 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.3 V
• Maximum Operating Current: 2 mA
• Organization: 64 K x 16
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Number Of Ports: 1
• Operating Supply Voltage: 3 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 766-1031

Ball Grid Array Package
Dimensions (mm)
A1 BALL PAD
CORNER (3)
6±0.10
D
K TYP
8±0.10
E
J TYP
0.375
TOP VIEW
BOTTOM VIEW
SD
D
0.375
SD
SE
Rev. 9 | Page 9 of 10 | www.onsemi.com
e = 0.75
e
A1 BALL PAD
CORNER
1.125
E
SE
e
J
1.24±0.10
1.375
K
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
0.28±0.05
SIDE VIEW
MATRIX
BALL
TYPE
FULL
2. SEATING PLANE - Z
1. 0.35±0.05 DIA.
0.15
0.05
Z
Z