MD4832-D512-V3Q18-X/Y SanDisk, MD4832-D512-V3Q18-X/Y Datasheet - Page 45

• Manufacturer Part Number: MD4832-D512-V3Q18-X/Y
• Description: IC MDOC G3 512MB 85-FBGA
• Manufacturer: SanDisk

Specifications of MD4832-D512-V3Q18-X/Y

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 585-1140

5.2
The first five blocks in Mobile DiskOnChip G3 contain foundry information, the Data Protect
structures, IPL code, and bad block mapping information. See Figure 16.
Blocks 0-4 in Mobile DiskOnChip G3 contain the following information:
42
Block 0
o
o
o
Block 1 and 2
o
Low-Level Structure of the Protected Area
Bad Block Table (page 4). Contains the mapping information on unusable erase units on
the flash media.
UID (16 bytes). This number is written during the manufacturing stage, and cannot be
altered at a later time.
Customer OTP (occupies pages 8-31). The OTP area is written once and then locked.
Data Protect Structure 0. This structure contains configuration information on one of the
two user-defined protected partitions. Block 2 is a copy of Block 1 for redundancy
purposes.
Bad Block Table and Factory-Programmed UID
Figure 16: Low Level Structure of Mobile DiskOnChip G3
Data Protect Structure 1 and IPL Code
Data Protect Structure 0
Preliminary Data Sheet, Rev. 1.1
OTP
Pages 0-5
Pages 8-31
Block 0
Block 1+2
Block 3+4
Mobile DiskOnChip G3
91-SR-011-05-8L