TH58100FT Toshiba, TH58100FT Datasheet - Page 41

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TH58100FT

Manufacturer Part Number
TH58100FT
Description
IC FLASH 1GBIT 50NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TH58100FT

Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
1G (128M x 8)
Speed
50ns
Interface
Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Bad Block Test Flow
Invalid blocks (bad blocks)
do not use these bad blocks.
The device contains unusable blocks. Therefore, at the time of use, please check whether a block is bad and
Figure 26.
Block No. = Block No. + 1
*1: No erase operation is allowed to detected bad blocks
Bad Block
Bad Block
No
Block, all bytes are not in the FFH state. Please don’t perform erase
operation to Bad Block.
Figure 27 shows the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
isolated from the Bit line by the Select gate
Valid (Good) Block Number
At the time of shipment, all data bytes in a Valid Block are FFH. For Bad
Check if the device has any bad blocks after installation into the system.
A bad block does not affect the performance of good blocks because it is
The number of valid blocks at the time of shipment is as follows:
Block No. = 8192
Block No = 1
Read Check
Figure 27
Start
End
Pass
Yes
Fail
8032
MIN
Read Check: to verify all pages in the block
Bad Block *1
TYP.
with FF (Hex)
2001-03-05 41/43
8192
MAX
TH58100FT
Block
UNIT

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