TH58100FT Toshiba, TH58100FT Datasheet - Page 27

• Manufacturer Part Number: TH58100FT
• Description: IC FLASH 1GBIT 50NS 48TSOP
• Manufacturer: Toshiba

Specifications of TH58100FT

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Speed: 50ns
• Interface: Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Multi Block Program
after some sets of the address and data have been input.
command is used when it still continues the data input into another District.
Data input
The device carries out an Multi Block Program operation when it receives a “15H” or “10H” Program command
In the interval of the Multi District adress and the (512 + 16 byte) data input, “11H” Dummy Program
The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)
After “15H” Multi Block Program command, physical programing starts as follows.
Data input
command
RY
/
Selected
BY
80
page
Address
Program
input
80
following input of the “15H” command. After programming, the programmed data is transferred back to the
register to be automatically verified by the device. If the programming does not succeed, the
Program/Verify operation is repeated by the device until success is achieved or until the maximum loop
number set in the device is reached.
The data is transferred (programmed) from the register to the selected page on the rising edge of -WE
Data input
(District 0)
0 to 527
command
Program
Dummy
11
Reading & verification
11
Data input
command
80
Address
80
input
(District 1)
Data input
0 to 527
command
Program
Dummy
11
11
Data input
command
80
Address
80
input
(District 2)
Data input
0 to 527
command
Program
Dummy
11
11
Data input
command
80
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80
Address
input
(District 3)
TH58100FT
Data input
0 to 527
Multi block
command
Program
15
15