CY7C1250V18-333BZXC Cypress Semiconductor Corp, CY7C1250V18-333BZXC Datasheet - Page 21

• Manufacturer Part Number: CY7C1250V18-333BZXC
• Description: IC SRAM 36MBIT 333MHZ 165TFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1250V18-333BZXC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 36M (1M x 36)
• Speed: 333MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

\
Capacitance
Tested initially and after any design or process change that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
AC Test Loads and Waveforms
Note
Document Number: 001-06348 Rev. *D
C
C
C
20. Unless otherwise noted, test conditions assume signal transition time of 2V/ns, timing reference levels of 0.75V, V
Parameter
Parameter
IN
CLK
O
pulse levels of 0.25V to 1.25V, and output loading of the specified I
Θ
Θ
OUTPUT
Device
Under
Test
JA
JC
V
REF
ZQ
(a)
Input Capacitance
Clock Input Capacitance
Output Capacitance
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Z
RQ =
250Ω
0.75V
0
= 50Ω
Description
Description
V
REF
R
L
= 0.75V
= 50Ω
Figure 4. AC Test Loads and Waveforms
T
V
V
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
A
INCLUDING
DD
DDQ
Device
Under
Test
OUTPUT
= 25°C, f = 1 MHz,
JIG AND
= 1.8V
SCOPE
= 1.5V
V
REF
ZQ
OL
/I
OH
0.75V
Test Conditions
Test Conditions
RQ =
250Ω
and load capacitance shown in (a) of
(b)
V
REF
= 0.75V
R = 50Ω
5 pF
0.25V
CY7C1246V18, CY7C1257V18
CY7C1248V18, CY7C1250V18
AC Test Loads and
1.25V
REF
Slew Rate = 2 V/ns
= 0.75V, RQ = 250Ω, V
ALL INPUT PULSES
0.75V
165 FBGA
Package
16.25
Max
2.91
5
4
5
Waveforms.
DDQ
[20]
°C/W
°C/W
= 1.5V, input
Unit
Unit
Page 21 of 27
pF
pF
pF
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