NAND512R3A2CZA6E NUMONYX, NAND512R3A2CZA6E Datasheet - Page 48

• Manufacturer Part Number: NAND512R3A2CZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC and AC parameters
Figure 35. Resistor value versus waveform timings for Ready/Busy signal
1. T = 25°C.
10.2
Figure 36. Data protection
48/55
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
below
V DD
DD
WP
(Figure
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in the figure
Nominal Range
range from V
36).
V LKO
Locked
LKO
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
Ai13188
LKO
NAND512-A2C
threshold.