NAND512R3A2CZA6E NUMONYX, NAND512R3A2CZA6E Datasheet - Page 46

• Manufacturer Part Number: NAND512R3A2CZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

DC and AC parameters
Figure 31. Program/erase enable waveforms
Figure 32. Program/erase disable waveforms
10.1
46/55
RB
RB
WP
WP
I/O
I/O
W
W
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
High
33,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 34
tVHWH
tVLWH
80h
80h
and
Figure 35
R P min
R P min 1.8V
R P min 3V
show the electrical characteristics for the Ready/Busy
=
(
-------------------------------------------------------------
(
V DDmax V OLmax
(
)
P
)
=
I OL
=
can be calculated using the following equation:
r
---------------------------
8mA
.
---------------------------
3mA
–
3.2V
+
1.85V
+
I L
+
I L
I L
10h
10h
)
NAND512-A2C
ai12477
ai12478
P